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Dive into the research topics where Balaji Raghothamachar is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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Advanced High Voltage Silicon Carbide Power Switches (CFP 1_CLA Topic 8_Project 8 of 15)
Dudley, M. (PI) & Raghothamachar, B. (CoPI)
09/13/24 → 11/30/26
Project: Research
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The onsemi Silicon Carbide Crystal Growth Center at Stony Brook University
Dudley, M. (PI), Gersappe, D. (CoPI) & Raghothamachar, B. (CoPI)
08/1/24 → 07/31/27
Project: Research
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Synchrotron X-ray Topography Studies on Bulk PVT-Grown 4H-SiC Wafters
Dudley, M. (PI) & Raghothamachar, B. (CoPI)
01/31/22 → 07/31/25
Project: Research
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ARPA-E: SBIR: Investigation of Defeat Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide
Dudley, M. (PI) & Raghothamachar, B. (CoPI)
01/1/20 → 09/28/22
Project: Research
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SMART SiC Power ICs
Dudley, M. (CoI), Sung, W. (PI), Lee, B. (CoI) & Raghothamachar, B. (CoI)
07/1/19 → 08/31/24
Project: Research
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High Quality P-Type 4H-SiC Growth by PVT Method
Hu, S., Wang, H., Chen, Z., Zhang, K., Li, Y., Zhang, J., Raghothamachar, B., Dudley, M., Dukes, D. & Torres, V., 2026, In: Defect and Diffusion Forum. 452, p. 59-64 6 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Chen, Z., Zhang, J., Hu, S., Zhang, K., Li, Y., Wang, H., Raghothamachar, B., Liu, Y., Bouch, C., Philpott, R., Turchetti, S., Schunemann, P. & Dudley, M., 2026, Materials Science Forum. Trans Tech Publications Ltd, p. 55-62 8 p. (Materials Science Forum; vol. 1190).Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review
Open Access -
Mechanisms of nucleation, dislocation formation, and stress evolution during atomistic growth of SiC films on miscut 4H-SiC substrates
Kayang, K. W., Raghothamachar, B., Dudley, M. & Gersappe, D., Jun 28 2026, In: Journal of Applied Physics. 139, 24, 245302.Research output: Contribution to journal › Article › peer-review
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Observation and Analysis of the “Galaxy” Defect in 4H-SiC Through X-Ray Synchrotron Topography
Zhang, K., Chen, Z., Hu, S., Zhang, J., Li, Y., Wu, D., Wang, H., Raghothamachar, B., Dudley, M. & Soukhojak, A., 2026, In: Defect and Diffusion Forum. 452, p. 73-78 6 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Stacking fault analysis for the early-stages of PVT growth of 4H-SiC crystals
Hu, S., Chen, Z., Zhang, K., Li, Y., Zhang, J., Raghothamachar, B., Dudley, M., Liu, C. & Zhu, Y., Apr 15 2026, In: Journal of Crystal Growth. 681, 128523.Research output: Contribution to journal › Article › peer-review