The group's scientific interests center on physics, characterization and development of optoelectronic devices and systems. Over the past several years, our efforts were focused on the studies of physics of semiconductor lasers, development of new types of light emitters and performance improvement of lasers and detectors. In most cases we attempt to identify the physical phenomena responsible for limitation of the device working characteristics and for device performance degradation (with temperature or with the level of electrical injection). Subsequently based on this understanding we optimize the device design in order to improve laser output characteristics. Among many projects completed by the group members are an improved design of 1.3 μm InP-based emitters for telecommunication; 1.5 μm InP-based lasers with world record value of peak optical power; development of new GaSb-based lasers operating at room temperature in CW regime within spectra range 2.0-3.5μm. Members of the group developed infrared LED and LED addressable arrays operate at wavelengths up to 3.8 μm at room temperature.