1.3μm InGaAsP/InP MQW lasers for high temperature operation. Experiment and modeling

G. Belenky; D. Donetsky; C. Reynolds; G. Shtengel; R. Kazarinov; S. Luryi

1.3μm InGaAsP/InP MQW lasers for high temperature operation. Experiment and modeling

G. Belenky
, D. Donetsky
, C. Reynolds
, G. Shtengel
, R. Kazarinov
, S. Luryi

Electrical Engineering

Stony Brook University

Research output: Contribution to conference › Paper › peer-review

Abstract

Growth, fabrication, as well as characterization and modeling of InGaAsP/InP lasers with 9 quantum well active region and different p-doping profiles are conducted within the temperature range of 10-80°C and the range of injection current densities up to 10 kA/cm². Measurements of the threshold current, external efficiency, and optical loss were performed for broad area and capped mesa buried heterostructure devices. For devices with moderately doped SCH, the threshold current at room temperature reaches the value of 115 A/cm² QW and T₀=64K. It is also shown that doping p-SCH suppresses the effect of electrostatic band profile deformation and improves device temperature performance.

Original language	English
Pages	227
Number of pages	1
State	Published - 1998
Event	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland Duration: Sep 14 1998 → Sep 18 1998

Conference

Conference	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
City	Glasgow, Scotland
Period	09/14/98 → 09/18/98

Cite this

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title = "1.3μm InGaAsP/InP MQW lasers for high temperature operation. Experiment and modeling",

abstract = "Growth, fabrication, as well as characterization and modeling of InGaAsP/InP lasers with 9 quantum well active region and different p-doping profiles are conducted within the temperature range of 10-80°C and the range of injection current densities up to 10 kA/cm2. Measurements of the threshold current, external efficiency, and optical loss were performed for broad area and capped mesa buried heterostructure devices. For devices with moderately doped SCH, the threshold current at room temperature reaches the value of 115 A/cm2 QW and T0=64K. It is also shown that doping p-SCH suppresses the effect of electrostatic band profile deformation and improves device temperature performance.",

author = "G. Belenky and D. Donetsky and C. Reynolds and G. Shtengel and R. Kazarinov and S. Luryi",

year = "1998",

language = "English",

pages = "227",

note = "Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 ; Conference date: 14-09-1998 Through 18-09-1998",

}

TY - CONF

T1 - 1.3μm InGaAsP/InP MQW lasers for high temperature operation. Experiment and modeling

AU - Belenky, G.

AU - Donetsky, D.

AU - Reynolds, C.

AU - Shtengel, G.

AU - Kazarinov, R.

AU - Luryi, S.

PY - 1998

Y1 - 1998

N2 - Growth, fabrication, as well as characterization and modeling of InGaAsP/InP lasers with 9 quantum well active region and different p-doping profiles are conducted within the temperature range of 10-80°C and the range of injection current densities up to 10 kA/cm2. Measurements of the threshold current, external efficiency, and optical loss were performed for broad area and capped mesa buried heterostructure devices. For devices with moderately doped SCH, the threshold current at room temperature reaches the value of 115 A/cm2 QW and T0=64K. It is also shown that doping p-SCH suppresses the effect of electrostatic band profile deformation and improves device temperature performance.

AB - Growth, fabrication, as well as characterization and modeling of InGaAsP/InP lasers with 9 quantum well active region and different p-doping profiles are conducted within the temperature range of 10-80°C and the range of injection current densities up to 10 kA/cm2. Measurements of the threshold current, external efficiency, and optical loss were performed for broad area and capped mesa buried heterostructure devices. For devices with moderately doped SCH, the threshold current at room temperature reaches the value of 115 A/cm2 QW and T0=64K. It is also shown that doping p-SCH suppresses the effect of electrostatic band profile deformation and improves device temperature performance.

UR - https://www.scopus.com/pages/publications/0031620764

M3 - Paper

AN - SCOPUS:0031620764

SP - 227

T2 - Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98

Y2 - 14 September 1998 through 18 September 1998

ER -

1.3μm InGaAsP/InP MQW lasers for high temperature operation. Experiment and modeling

Abstract

Conference

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