1.47-1.49-μm InGaAsP/InP diode laser arrays

A. Gourevitch; G. Belenky; D. Donetsky; B. Laikhtman; D. Westerfeld; C. W. Trussell; H. An; Z. Shellenbarger; R. Martinelli

doi:10.1063/1.1596379

1.47-1.49-μm InGaAsP/InP diode laser arrays

A. Gourevitch
, G. Belenky
, D. Donetsky
, B. Laikhtman
, D. Westerfeld
, C. W. Trussell
, H. An
, Z. Shellenbarger
, R. Martinelli

Electrical Engineering

Stony Brook University
Hebrew University of Jerusalem
United States Army
Sarnoff Corporation

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The 1.47-1.49-μm InGaAs/InP diode laser arrays were investigated. Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. Thermal resistances of 0.56, 0.4 and 0.34 K/W were determined for arrays with fill factors of 10%, 20% and 40% respectively.

Original language	English
Pages (from-to)	617-619
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	4
DOIs	https://doi.org/10.1063/1.1596379
State	Published - Jul 28 2003

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10.1063/1.1596379

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title = "1.47-1.49-μm InGaAsP/InP diode laser arrays",

abstract = "The 1.47-1.49-μm InGaAs/InP diode laser arrays were investigated. Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. Thermal resistances of 0.56, 0.4 and 0.34 K/W were determined for arrays with fill factors of 10\%, 20\% and 40\% respectively.",

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T1 - 1.47-1.49-μm InGaAsP/InP diode laser arrays

AU - Gourevitch, A.

AU - Belenky, G.

AU - Donetsky, D.

AU - Laikhtman, B.

AU - Westerfeld, D.

AU - Trussell, C. W.

AU - An, H.

AU - Shellenbarger, Z.

AU - Martinelli, R.

PY - 2003/7/28

Y1 - 2003/7/28

N2 - The 1.47-1.49-μm InGaAs/InP diode laser arrays were investigated. Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. Thermal resistances of 0.56, 0.4 and 0.34 K/W were determined for arrays with fill factors of 10%, 20% and 40% respectively.

AB - The 1.47-1.49-μm InGaAs/InP diode laser arrays were investigated. Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. Thermal resistances of 0.56, 0.4 and 0.34 K/W were determined for arrays with fill factors of 10%, 20% and 40% respectively.

UR - https://www.scopus.com/pages/publications/0042013063

U2 - 10.1063/1.1596379

DO - 10.1063/1.1596379

M3 - Article

AN - SCOPUS:0042013063

SN - 0003-6951

VL - 83

SP - 617

EP - 619

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

1.47-1.49-μm InGaAsP/InP diode laser arrays

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