TY - GEN
T1 - 1.9-3.3 μm Type-I quantum-well cascade diode lasers
AU - Shterengas, L.
AU - Hosoda, T.
AU - Kipshidze, G.
AU - Feng, T.
AU - Wang, M.
AU - Belenky, G.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/8/17
Y1 - 2017/8/17
N2 - GaSb-based type-I quantum well (QW) diode lasers can operate in continuous wave (CW) regime at room temperature (RT) in spectral range from 1.9 to 3.5 μm. CW output power levels from 100-μm-wide aperture of multimode lasers exceeded 1 W for devices emitting below 2.5 μm and hundreds of mW were achieved for lasers operating at longer wavelength. Recently cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers. Carrier recycling between two QWs emitting near 3 μm led to reduction of the threshold current density from ∼200 down to ∼100 A/cm2 and increase of the maximum CW power level from ∼350 up to ∼650 mW compared to non-cascade diodes. Narrow ridge lasers fabricated from the same material demonstrated record 100 mW of CW power in nearly diffraction limited beam.
AB - GaSb-based type-I quantum well (QW) diode lasers can operate in continuous wave (CW) regime at room temperature (RT) in spectral range from 1.9 to 3.5 μm. CW output power levels from 100-μm-wide aperture of multimode lasers exceeded 1 W for devices emitting below 2.5 μm and hundreds of mW were achieved for lasers operating at longer wavelength. Recently cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers. Carrier recycling between two QWs emitting near 3 μm led to reduction of the threshold current density from ∼200 down to ∼100 A/cm2 and increase of the maximum CW power level from ∼350 up to ∼650 mW compared to non-cascade diodes. Narrow ridge lasers fabricated from the same material demonstrated record 100 mW of CW power in nearly diffraction limited beam.
UR - https://www.scopus.com/pages/publications/85029354152
U2 - 10.1109/PHOSST.2017.8012712
DO - 10.1109/PHOSST.2017.8012712
M3 - Conference contribution
AN - SCOPUS:85029354152
T3 - Summer Topicals Meeting Series, SUM 2017
SP - 185
EP - 186
BT - Summer Topicals Meeting Series, SUM 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017
Y2 - 10 July 2017 through 12 July 2017
ER -