200 mW type i GaSb-based laser diodes operating at 3 μm: Role of waveguide width

Takashi Hosoda; Gela Kipshidze; Leon Shterengas; Sergey Suchalkin; Gregory Belenky

doi:10.1063/1.3159819

200 mW type i GaSb-based laser diodes operating at 3 ^μm: Role of waveguide width

Takashi Hosoda
, Gela Kipshidze
, Leon Shterengas
, Sergey Suchalkin
, Gregory Belenky

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Laser diodes based on AlInGaAsSb/InGaAsSb heterostructures with different waveguide widths were designed and fabricated. The decrease in the waveguide width from 1470 to 470 nm led to the improvement of the device performance. Lasers with 470 nm quinternary waveguides demonstrated 200 mW continuous wave output power at room temperature.

Original language	English
Article number	261104
Journal	Applied Physics Letters
Volume	94
Issue number	26
DOIs	https://doi.org/10.1063/1.3159819
State	Published - 2009

Access to Document

10.1063/1.3159819

Cite this

@article{7165e6dc1b904c1382766387a2db4ef9,

title = "200 mW type i GaSb-based laser diodes operating at 3 μm: Role of waveguide width",

abstract = "Laser diodes based on AlInGaAsSb/InGaAsSb heterostructures with different waveguide widths were designed and fabricated. The decrease in the waveguide width from 1470 to 470 nm led to the improvement of the device performance. Lasers with 470 nm quinternary waveguides demonstrated 200 mW continuous wave output power at room temperature.",

author = "Takashi Hosoda and Gela Kipshidze and Leon Shterengas and Sergey Suchalkin and Gregory Belenky",

year = "2009",

doi = "10.1063/1.3159819",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "26",

}

TY - JOUR

T1 - 200 mW type i GaSb-based laser diodes operating at 3 μm: Role of waveguide width

AU - Hosoda, Takashi

AU - Kipshidze, Gela

AU - Shterengas, Leon

AU - Suchalkin, Sergey

AU - Belenky, Gregory

PY - 2009

Y1 - 2009

N2 - Laser diodes based on AlInGaAsSb/InGaAsSb heterostructures with different waveguide widths were designed and fabricated. The decrease in the waveguide width from 1470 to 470 nm led to the improvement of the device performance. Lasers with 470 nm quinternary waveguides demonstrated 200 mW continuous wave output power at room temperature.

AB - Laser diodes based on AlInGaAsSb/InGaAsSb heterostructures with different waveguide widths were designed and fabricated. The decrease in the waveguide width from 1470 to 470 nm led to the improvement of the device performance. Lasers with 470 nm quinternary waveguides demonstrated 200 mW continuous wave output power at room temperature.

UR - https://www.scopus.com/pages/publications/67649933562

U2 - 10.1063/1.3159819

DO - 10.1063/1.3159819

M3 - Article

AN - SCOPUS:67649933562

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 261104

ER -

200 mW type i GaSb-based laser diodes operating at 3 ^μm: Role of waveguide width

Abstract

Access to Document

Other files and links

Fingerprint

Cite this