Skip to main navigation Skip to search Skip to main content

2.2-2.5 μm InGaAsSb/AlGaAsSb QW diode laser with extraordinarily wide (Δλ ≈ 300 nm) optical gain spectrum

  • Stony Brook University

Research output: Contribution to conferencePaperpeer-review

Abstract

Optical gain spectra of quantum well gallium antimony based lasers were studied. The temperature and current dependence of modal gain and internal loss were measured by spatial filtering technique. Results of direct measurement were compared with the results of calculations for ridge-waveguide devices. Two-color lasing in a range of currents and temperatures was observed. The optical gain was found to depend upon quasi-Fermi level separation associated with optical transitions.

Original languageEnglish
Pages193-194
Number of pages2
StatePublished - 2001
EventConference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States
Duration: May 6 2001May 11 2001

Conference

ConferenceConference on Lasers and Electro-Optics (CLEO)
Country/TerritoryUnited States
CityBaltimore, MD
Period05/6/0105/11/01

Fingerprint

Dive into the research topics of '2.2-2.5 μm InGaAsSb/AlGaAsSb QW diode laser with extraordinarily wide (Δλ ≈ 300 nm) optical gain spectrum'. Together they form a unique fingerprint.

Cite this