2.3-μm high-power type i quantum-well GaInAsSb/AlGaAsSb/GaSb laser diode arrays with increased fill factor

D. Donetsky; J. Chen; L. Shterengas; G. Kipshidze; D. Westerfeld

doi:10.1007/s11664-008-0495-3

2.3-μm high-power type i quantum-well GaInAsSb/AlGaAsSb/GaSb laser diode arrays with increased fill factor

D. Donetsky
, J. Chen
, L. Shterengas
, G. Kipshidze
, D. Westerfeld

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Arrays of 100-μm-wide GaInAsSb/AlGaAsSb laser diode emitters with a fill factor of 30% have been fabricated. Suppression of lateral lasing was achieved by the incorporation of grooves between the emitters. A quasi-continuous wave (CW) (30 μs, 300 Hz) output power of 16.7 W from a 4-mm-long laser bar has been demonstrated.

Original language	English
Pages (from-to)	1770-1773
Number of pages	4
Journal	Journal of Electronic Materials
Volume	37
Issue number	12
DOIs	https://doi.org/10.1007/s11664-008-0495-3
State	Published - Dec 2008

Keywords

GaSb
Laser diode
Laser diode array
Mid-infrared

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10.1007/s11664-008-0495-3

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title = "2.3-μm high-power type i quantum-well GaInAsSb/AlGaAsSb/GaSb laser diode arrays with increased fill factor",

abstract = "Arrays of 100-μm-wide GaInAsSb/AlGaAsSb laser diode emitters with a fill factor of 30\% have been fabricated. Suppression of lateral lasing was achieved by the incorporation of grooves between the emitters. A quasi-continuous wave (CW) (30 μs, 300 Hz) output power of 16.7 W from a 4-mm-long laser bar has been demonstrated.",

keywords = "GaSb, Laser diode, Laser diode array, Mid-infrared",

author = "D. Donetsky and J. Chen and L. Shterengas and G. Kipshidze and D. Westerfeld",

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doi = "10.1007/s11664-008-0495-3",

language = "English",

volume = "37",

pages = "1770--1773",

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T1 - 2.3-μm high-power type i quantum-well GaInAsSb/AlGaAsSb/GaSb laser diode arrays with increased fill factor

AU - Donetsky, D.

AU - Chen, J.

AU - Shterengas, L.

AU - Kipshidze, G.

AU - Westerfeld, D.

PY - 2008/12

Y1 - 2008/12

N2 - Arrays of 100-μm-wide GaInAsSb/AlGaAsSb laser diode emitters with a fill factor of 30% have been fabricated. Suppression of lateral lasing was achieved by the incorporation of grooves between the emitters. A quasi-continuous wave (CW) (30 μs, 300 Hz) output power of 16.7 W from a 4-mm-long laser bar has been demonstrated.

AB - Arrays of 100-μm-wide GaInAsSb/AlGaAsSb laser diode emitters with a fill factor of 30% have been fabricated. Suppression of lateral lasing was achieved by the incorporation of grooves between the emitters. A quasi-continuous wave (CW) (30 μs, 300 Hz) output power of 16.7 W from a 4-mm-long laser bar has been demonstrated.

KW - GaSb

KW - Laser diode

KW - Laser diode array

KW - Mid-infrared

UR - https://www.scopus.com/pages/publications/54949115487

U2 - 10.1007/s11664-008-0495-3

DO - 10.1007/s11664-008-0495-3

M3 - Article

AN - SCOPUS:54949115487

SN - 0361-5235

VL - 37

SP - 1770

EP - 1773

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

2.3-μm high-power type i quantum-well GaInAsSb/AlGaAsSb/GaSb laser diode arrays with increased fill factor

Abstract

Keywords

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