2.7-μm GaSb-based diode lasers with quinary waveguide

J. Chen; G. Kipshidze; L. Shterengas; T. Hosoda; Y. Wang; D. Donetsky; G. Belenky

doi:10.1109/LPT.2009.2023224

2.7-μm GaSb-based diode lasers with quinary waveguide

J. Chen
, G. Kipshidze
, L. Shterengas
, T. Hosoda
, Y. Wang
, D. Donetsky
, G. Belenky

Electrical Engineering

Stony Brook University
nGimat Co.

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 μm with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm² per QW and slope efficiency of 150 mW/ A were demonstrated at 16 °C.

Original language	English
Pages (from-to)	1112-1114
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2009.2023224
State	Published - Aug 15 2009

Keywords

Laser
Power laser
Semiconductor laser

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10.1109/LPT.2009.2023224

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title = "2.7-μm GaSb-based diode lasers with quinary waveguide",

abstract = "Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 μm with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10\% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm2 per QW and slope efficiency of 150 mW/ A were demonstrated at 16 °C.",

keywords = "Laser, Power laser, Semiconductor laser",

author = "J. Chen and G. Kipshidze and L. Shterengas and T. Hosoda and Y. Wang and D. Donetsky and G. Belenky",

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month = aug,

day = "15",

doi = "10.1109/LPT.2009.2023224",

language = "English",

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T1 - 2.7-μm GaSb-based diode lasers with quinary waveguide

AU - Chen, J.

AU - Kipshidze, G.

AU - Shterengas, L.

AU - Hosoda, T.

AU - Wang, Y.

AU - Donetsky, D.

AU - Belenky, G.

PY - 2009/8/15

Y1 - 2009/8/15

N2 - Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 μm with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm2 per QW and slope efficiency of 150 mW/ A were demonstrated at 16 °C.

AB - Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 μm with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm2 per QW and slope efficiency of 150 mW/ A were demonstrated at 16 °C.

KW - Laser

KW - Power laser

KW - Semiconductor laser

UR - https://www.scopus.com/pages/publications/68449085631

U2 - 10.1109/LPT.2009.2023224

DO - 10.1109/LPT.2009.2023224

M3 - Article

AN - SCOPUS:68449085631

SN - 1041-1135

VL - 21

SP - 1112

EP - 1114

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 16

ER -

2.7-μm GaSb-based diode lasers with quinary waveguide

Abstract

Keywords

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