3 μm GaSb-based type-I quantum-well diode lasers with cascade pumping scheme

Rui Liang; Takashi Hosoda; Gela Kipshidze; Leon Shterengas; Gregory Belenky

3 μm GaSb-based type-I quantum-well diode lasers with cascade pumping scheme

Rui Liang
, Takashi Hosoda
, Gela Kipshidze
, Leon Shterengas
, Gregory Belenky

Electrical Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

GaSb-based type-I quantum-well diode lasers with two-cascade active region were designed and fabricated. The injection is achieved by means of tunnel junction between AlGaAsSb graded composition and InAs/AlSb chirped superlattice layers. The devices operate in continuous wave regime at room temperature and demonstrate twofold improvement of injection efficiency as compared to reference single cascade lasers.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2013
Pages	CM2K.5
State	Published - 2013
Event	CLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States Duration: Jun 9 2013 → Jun 14 2013

Publication series

Name	CLEO: Science and Innovations, CLEO_SI 2013

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2013
Country/Territory	United States
City	San Jose, CA
Period	06/9/13 → 06/14/13

Cite this

@inproceedings{ddd8dab82a1f4a29be26d2271a548070,

title = "3 μm GaSb-based type-I quantum-well diode lasers with cascade pumping scheme",

abstract = "GaSb-based type-I quantum-well diode lasers with two-cascade active region were designed and fabricated. The injection is achieved by means of tunnel junction between AlGaAsSb graded composition and InAs/AlSb chirped superlattice layers. The devices operate in continuous wave regime at room temperature and demonstrate twofold improvement of injection efficiency as compared to reference single cascade lasers.",

author = "Rui Liang and Takashi Hosoda and Gela Kipshidze and Leon Shterengas and Gregory Belenky",

year = "2013",

language = "English",

isbn = "9781557529725",

series = "CLEO: Science and Innovations, CLEO\_SI 2013",

pages = "CM2K.5",

booktitle = "CLEO",

note = "CLEO: Science and Innovations, CLEO\_SI 2013 ; Conference date: 09-06-2013 Through 14-06-2013",

}

TY - GEN

T1 - 3 μm GaSb-based type-I quantum-well diode lasers with cascade pumping scheme

AU - Liang, Rui

AU - Hosoda, Takashi

AU - Kipshidze, Gela

AU - Shterengas, Leon

AU - Belenky, Gregory

PY - 2013

Y1 - 2013

N2 - GaSb-based type-I quantum-well diode lasers with two-cascade active region were designed and fabricated. The injection is achieved by means of tunnel junction between AlGaAsSb graded composition and InAs/AlSb chirped superlattice layers. The devices operate in continuous wave regime at room temperature and demonstrate twofold improvement of injection efficiency as compared to reference single cascade lasers.

AB - GaSb-based type-I quantum-well diode lasers with two-cascade active region were designed and fabricated. The injection is achieved by means of tunnel junction between AlGaAsSb graded composition and InAs/AlSb chirped superlattice layers. The devices operate in continuous wave regime at room temperature and demonstrate twofold improvement of injection efficiency as compared to reference single cascade lasers.

UR - https://www.scopus.com/pages/publications/84887471480

M3 - Conference contribution

AN - SCOPUS:84887471480

SN - 9781557529725

T3 - CLEO: Science and Innovations, CLEO_SI 2013

SP - CM2K.5

BT - CLEO

T2 - CLEO: Science and Innovations, CLEO_SI 2013

Y2 - 9 June 2013 through 14 June 2013

ER -

3 μm GaSb-based type-I quantum-well diode lasers with cascade pumping scheme

Abstract

Publication series

Conference

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