@inproceedings{0df7dc5e05574f17b979d43cdef0c979,
title = "3 μm GaSb-based type-i quantum-well diode lasers with cascade pumping scheme",
abstract = "GaSb-based type-I quantum-well diode lasers with two-cascade active region were designed and fabricated. The injection is achieved by means of tunnel junction between AlGaAsSb graded composition and InAs/AlSb chirped superlattice layers. The devices operate in continuous wave regime at room temperature and demonstrate twofold improvement of injection efficiency as compared to reference single cascade lasers.",
author = "Rui Liang and Takashi Hosoda and Gela Kipshidze and Leon Shterengas and Gregory Belenky",
year = "2013",
doi = "10.1364/cleo\_si.2013.cm2k.5",
language = "English",
isbn = "9781557529725",
series = "2013 Conference on Lasers and Electro-Optics, CLEO 2013",
publisher = "IEEE Computer Society",
booktitle = "2013 Conference on Lasers and Electro-Optics, CLEO 2013",
note = "2013 Conference on Lasers and Electro-Optics, CLEO 2013 ; Conference date: 09-06-2013 Through 14-06-2013",
}