3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

Cinzia Da Vià; Maurizio Boscardil; Gianfranco Dalla Betta; Giovanni Darbo; Celeste Fleta; Claudia Gemme; Gabriele Giacomini; Philippe Grenier; Sebastian Grinstein; Thor Erik Hansen; Jasmine Hasi; Christopher Kenney; Angela Kok; Alessandro La Rosa; Andrea Micelli; Sherwood Parker; Giulio Pellegrini; David Leon Pohl; Marco Povoli; Elisa Vianello; Nicola Zorzi; S. J. Watts

doi:10.1016/j.nima.2012.05.070

3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

Cinzia Da Vià
, Maurizio Boscardil
, Gianfranco Dalla Betta
, Giovanni Darbo
, Celeste Fleta
, Claudia Gemme
, Gabriele Giacomini
, Philippe Grenier
, Sebastian Grinstein
, Thor Erik Hansen
, Jasmine Hasi
, Christopher Kenney
, Angela Kok
, Alessandro La Rosa
, Andrea Micelli
, Sherwood Parker
, Giulio Pellegrini
, David Leon Pohl
, Marco Povoli
, Elisa Vianello

Nicola Zorzi, S. J. Watts

Physics and Astronomy

Fondazione Bruno Kessler
University of Trento
National Institute for Nuclear Physics
Centro Nacional de Microelectrónica (IMB-CNM-CSIC)
SLAC National Accelerator Laboratory
Autonomous University of Barcelona
SINTEF
CERN
University of Udine
Lawrence Berkeley National Laboratory
University of Bonn
University of Manchester

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

Original language	English
Pages (from-to)	18-21
Number of pages	4
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	699
DOIs	https://doi.org/10.1016/j.nima.2012.05.070
State	Published - Jan 21 2013

Keywords

3D silicon sensor
ATLAS Insertable B-Layer
FE-I4
IBL
LHC upgrade
Pixels
Radiation hardness

Access to Document

10.1016/j.nima.2012.05.070

Cite this

Da Vià, C., Boscardil, M., Dalla Betta, G., Darbo, G., Fleta, C., Gemme, C., Giacomini, G., Grenier, P., Grinstein, S., Hansen, T. E., Hasi, J., Kenney, C., Kok, A., La Rosa, A., Micelli, A., Parker, S., Pellegrini, G., Pohl, D. L., Povoli, M., ... Watts, S. J. (2013). 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production. Nuclear Inst. and Methods in Physics Research, A, 699, 18-21. https://doi.org/10.1016/j.nima.2012.05.070

@article{b854257df4b64729b6101fc66a4cda1e,

title = "3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production",

abstract = "3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25\% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100\% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.",

keywords = "3D silicon sensor, ATLAS Insertable B-Layer, FE-I4, IBL, LHC upgrade, Pixels, Radiation hardness",

author = "\{Da Vi{\`a}\}, Cinzia and Maurizio Boscardil and \{Dalla Betta\}, Gianfranco and Giovanni Darbo and Celeste Fleta and Claudia Gemme and Gabriele Giacomini and Philippe Grenier and Sebastian Grinstein and Hansen, \{Thor Erik\} and Jasmine Hasi and Christopher Kenney and Angela Kok and \{La Rosa\}, Alessandro and Andrea Micelli and Sherwood Parker and Giulio Pellegrini and Pohl, \{David Leon\} and Marco Povoli and Elisa Vianello and Nicola Zorzi and Watts, \{S. J.\}",

year = "2013",

month = jan,

day = "21",

doi = "10.1016/j.nima.2012.05.070",

language = "English",

volume = "699",

pages = "18--21",

journal = "Nuclear Inst. and Methods in Physics Research, A",

issn = "0168-9002",

}

Da Vià, C, Boscardil, M, Dalla Betta, G, Darbo, G, Fleta, C, Gemme, C, Giacomini, G, Grenier, P, Grinstein, S, Hansen, TE, Hasi, J, Kenney, C, Kok, A, La Rosa, A, Micelli, A, Parker, S, Pellegrini, G, Pohl, DL, Povoli, M, Vianello, E, Zorzi, N & Watts, SJ 2013, '3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production', Nuclear Inst. and Methods in Physics Research, A, vol. 699, pp. 18-21. https://doi.org/10.1016/j.nima.2012.05.070

TY - JOUR

T1 - 3D active edge silicon sensors

T2 - Device processing, yield and QA for the ATLAS-IBL production

AU - Da Vià, Cinzia

AU - Boscardil, Maurizio

AU - Dalla Betta, Gianfranco

AU - Darbo, Giovanni

AU - Fleta, Celeste

AU - Gemme, Claudia

AU - Giacomini, Gabriele

AU - Grenier, Philippe

AU - Grinstein, Sebastian

AU - Hansen, Thor Erik

AU - Hasi, Jasmine

AU - Kenney, Christopher

AU - Kok, Angela

AU - La Rosa, Alessandro

AU - Micelli, Andrea

AU - Parker, Sherwood

AU - Pellegrini, Giulio

AU - Pohl, David Leon

AU - Povoli, Marco

AU - Vianello, Elisa

AU - Zorzi, Nicola

AU - Watts, S. J.

PY - 2013/1/21

Y1 - 2013/1/21

N2 - 3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

AB - 3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

KW - 3D silicon sensor

KW - ATLAS Insertable B-Layer

KW - FE-I4

KW - IBL

KW - LHC upgrade

KW - Pixels

KW - Radiation hardness

UR - https://www.scopus.com/pages/publications/84870444659

U2 - 10.1016/j.nima.2012.05.070

DO - 10.1016/j.nima.2012.05.070

M3 - Article

AN - SCOPUS:84870444659

SN - 0168-9002

VL - 699

SP - 18

EP - 21

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

ER -

3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this