TY - GEN
T1 - 3D silicon sensors - Large area production, QA and development for the CERN ATLAS experiment pixel sensor upgrade
AU - Kok, A.
AU - Boscardin, M.
AU - Dalla Betta, G. F.
AU - Da Via, C.
AU - Darbo, G.
AU - Fleta, C.
AU - Grenier, P.
AU - Grinstein, S.
AU - Hansen, T. E.
AU - Hasi, J.
AU - Kenney, C. J.
AU - Parker, S. I.
AU - Pellegrini, G.
AU - Vianello, E.
AU - Zorzi, N.
PY - 2012
Y1 - 2012
N2 - 3D silicon sensors, where electrodes penetrate fully or partially through the silicon substrate, have been successfully fabricated in different processing facilities in Europe and the USA. They key to 3D fabrication is the use of plasma micro-machining to etch narrow deep vertical openings which allow dopants to be diffused in and form the electrodes of the p-i-n junctions. Similar openings can be used at the sensor's edge to reduce the perimeter's dead area to be as narrow as 4 μm. Since 2009, four fabrication facilities of the 3D ATLAS R&D Collaboration started a joint effort aimed at one common design and compatible processing strategy for the production of 3D sensors for the LHC Upgrade and in particular for the ATLAS pixel Insertable B-Layer (IBL). In this project where the installation is aimed for 2013, a new layer will be inserted as close as 3.4 cm from the proton beams inside the existing pixel layers of the ATLAS experiment. The detector proximity to the interaction point will therefore require new radiation hard technologies for both sensors and front-end electronics. The latter, called FE-I4 is processed at IBM and is the biggest front end of its kind, with a surface area of about 4 cm2. This paper will discuss some design aspects, and the different approaches taken by the facilities. Results from both the qualification runs and the current production runs for the IBL are also reported.
AB - 3D silicon sensors, where electrodes penetrate fully or partially through the silicon substrate, have been successfully fabricated in different processing facilities in Europe and the USA. They key to 3D fabrication is the use of plasma micro-machining to etch narrow deep vertical openings which allow dopants to be diffused in and form the electrodes of the p-i-n junctions. Similar openings can be used at the sensor's edge to reduce the perimeter's dead area to be as narrow as 4 μm. Since 2009, four fabrication facilities of the 3D ATLAS R&D Collaboration started a joint effort aimed at one common design and compatible processing strategy for the production of 3D sensors for the LHC Upgrade and in particular for the ATLAS pixel Insertable B-Layer (IBL). In this project where the installation is aimed for 2013, a new layer will be inserted as close as 3.4 cm from the proton beams inside the existing pixel layers of the ATLAS experiment. The detector proximity to the interaction point will therefore require new radiation hard technologies for both sensors and front-end electronics. The latter, called FE-I4 is processed at IBM and is the biggest front end of its kind, with a surface area of about 4 cm2. This paper will discuss some design aspects, and the different approaches taken by the facilities. Results from both the qualification runs and the current production runs for the IBL are also reported.
UR - https://www.scopus.com/pages/publications/84881562159
U2 - 10.1109/NSSMIC.2012.6551300
DO - 10.1109/NSSMIC.2012.6551300
M3 - Conference contribution
AN - SCOPUS:84881562159
SN - 9781467320306
T3 - IEEE Nuclear Science Symposium Conference Record
SP - 1216
EP - 1220
BT - 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record, NSS/MIC 2012
T2 - 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record, NSS/MIC 2012
Y2 - 29 October 2012 through 3 November 2012
ER -