A 1.2 kV 400A SiC-MOSFET based 3L-TNPC power module with improved hybrid packaging method for high-density applications

Zhao Yuan; Asif Imran Emon; Si Huang; Zhongjing Wang; Yalin Wang; Mustafeez Hassan; Balaji Narayanasamy; Amol Deshpande; Fang Luo

doi:10.1109/APEC42165.2021.9487258

A 1.2 kV 400A SiC-MOSFET based 3L-TNPC power module with improved hybrid packaging method for high-density applications

Zhao Yuan
, Asif Imran Emon
, Si Huang
, Zhongjing Wang
, Yalin Wang
, Mustafeez Hassan
, Balaji Narayanasamy
, Amol Deshpande
, Fang Luo

Electrical Engineering

University of Arkansas, Fayetteville
Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Three-level T-type neutral-point-clamped converters (3L-TNPC) are widely used in motor drive and PV applications because of the higher efficiency, improved output THD, and lower common-mode noise. But such topology suffers from high stray inductance because of the complicated power loop structure. This paper proposes a SiC-MOSFET based 3L-TNPC power module with a hybrid packaging method. The module has a printed circuit board (PCB) directly soldered on top of direct bounding copper (DBC), with bare dies soldered on DBC and connecting to PCB by bonding wires. Such a structure allows the power loop on both DBC and PCB. This reduces stray inductance through enhanced mutual-inductance cancellation. The introduced PCB can provide extra flexibility in gate-loop optimization, enabling synchronous gate drive between parallel dies. The heat from dies can also be directly dissipated through DBC and the proposed direct-soldered coldplate. A 1.2 kV, 400 A SiC 3L-TNPC module is fabricated with measured loop inductance of 2.5 nH. Faster driving speed by using 0.33Ω gate resistance is enabled to reduce switching loss. Eventually, double-pulse tests and continuous tests are carried out to evaluate the module.

Original language	English
Title of host publication	2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	27-32
Number of pages	6
ISBN (Electronic)	9781728189499
DOIs	https://doi.org/10.1109/APEC42165.2021.9487258
State	Published - Jun 14 2021
Event	36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021 - Virtual, Online, United States Duration: Jun 14 2021 → Jun 17 2021

Publication series

Name	Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference	36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021
Country/Territory	United States
City	Virtual, Online
Period	06/14/21 → 06/17/21

Keywords

Hybrid packaging
PCB
Power density
Power module
SiC MOSFET
Stray inductance
Three-level

Access to Document

10.1109/APEC42165.2021.9487258

Cite this

Yuan, Z., Emon, A. I., Huang, S., Wang, Z., Wang, Y., Hassan, M., Narayanasamy, B., Deshpande, A., & Luo, F. (2021). A 1.2 kV 400A SiC-MOSFET based 3L-TNPC power module with improved hybrid packaging method for high-density applications. In 2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021 (pp. 27-32). (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC42165.2021.9487258

Yuan, Zhao ; Emon, Asif Imran ; Huang, Si et al. / A 1.2 kV 400A SiC-MOSFET based 3L-TNPC power module with improved hybrid packaging method for high-density applications. 2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 27-32 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

@inproceedings{0e8c552ac62f42eb907962db6110ffe1,

title = "A 1.2 kV 400A SiC-MOSFET based 3L-TNPC power module with improved hybrid packaging method for high-density applications",

abstract = "Three-level T-type neutral-point-clamped converters (3L-TNPC) are widely used in motor drive and PV applications because of the higher efficiency, improved output THD, and lower common-mode noise. But such topology suffers from high stray inductance because of the complicated power loop structure. This paper proposes a SiC-MOSFET based 3L-TNPC power module with a hybrid packaging method. The module has a printed circuit board (PCB) directly soldered on top of direct bounding copper (DBC), with bare dies soldered on DBC and connecting to PCB by bonding wires. Such a structure allows the power loop on both DBC and PCB. This reduces stray inductance through enhanced mutual-inductance cancellation. The introduced PCB can provide extra flexibility in gate-loop optimization, enabling synchronous gate drive between parallel dies. The heat from dies can also be directly dissipated through DBC and the proposed direct-soldered coldplate. A 1.2 kV, 400 A SiC 3L-TNPC module is fabricated with measured loop inductance of 2.5 nH. Faster driving speed by using 0.33Ω gate resistance is enabled to reduce switching loss. Eventually, double-pulse tests and continuous tests are carried out to evaluate the module.",

keywords = "Hybrid packaging, PCB, Power density, Power module, SiC MOSFET, Stray inductance, Three-level",

author = "Zhao Yuan and Emon, \{Asif Imran\} and Si Huang and Zhongjing Wang and Yalin Wang and Mustafeez Hassan and Balaji Narayanasamy and Amol Deshpande and Fang Luo",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021 ; Conference date: 14-06-2021 Through 17-06-2021",

year = "2021",

month = jun,

day = "14",

doi = "10.1109/APEC42165.2021.9487258",

language = "English",

series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "27--32",

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}

Yuan, Z, Emon, AI, Huang, S, Wang, Z, Wang, Y, Hassan, M, Narayanasamy, B, Deshpande, A & Luo, F 2021, A 1.2 kV 400A SiC-MOSFET based 3L-TNPC power module with improved hybrid packaging method for high-density applications. in 2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021. Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, Institute of Electrical and Electronics Engineers Inc., pp. 27-32, 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021, Virtual, Online, United States, 06/14/21. https://doi.org/10.1109/APEC42165.2021.9487258

A 1.2 kV 400A SiC-MOSFET based 3L-TNPC power module with improved hybrid packaging method for high-density applications. / Yuan, Zhao; Emon, Asif Imran; Huang, Si et al.
2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 27-32 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 1.2 kV 400A SiC-MOSFET based 3L-TNPC power module with improved hybrid packaging method for high-density applications

AU - Yuan, Zhao

AU - Emon, Asif Imran

AU - Huang, Si

AU - Wang, Zhongjing

AU - Wang, Yalin

AU - Hassan, Mustafeez

AU - Narayanasamy, Balaji

AU - Deshpande, Amol

AU - Luo, Fang

PY - 2021/6/14

Y1 - 2021/6/14

N2 - Three-level T-type neutral-point-clamped converters (3L-TNPC) are widely used in motor drive and PV applications because of the higher efficiency, improved output THD, and lower common-mode noise. But such topology suffers from high stray inductance because of the complicated power loop structure. This paper proposes a SiC-MOSFET based 3L-TNPC power module with a hybrid packaging method. The module has a printed circuit board (PCB) directly soldered on top of direct bounding copper (DBC), with bare dies soldered on DBC and connecting to PCB by bonding wires. Such a structure allows the power loop on both DBC and PCB. This reduces stray inductance through enhanced mutual-inductance cancellation. The introduced PCB can provide extra flexibility in gate-loop optimization, enabling synchronous gate drive between parallel dies. The heat from dies can also be directly dissipated through DBC and the proposed direct-soldered coldplate. A 1.2 kV, 400 A SiC 3L-TNPC module is fabricated with measured loop inductance of 2.5 nH. Faster driving speed by using 0.33Ω gate resistance is enabled to reduce switching loss. Eventually, double-pulse tests and continuous tests are carried out to evaluate the module.

AB - Three-level T-type neutral-point-clamped converters (3L-TNPC) are widely used in motor drive and PV applications because of the higher efficiency, improved output THD, and lower common-mode noise. But such topology suffers from high stray inductance because of the complicated power loop structure. This paper proposes a SiC-MOSFET based 3L-TNPC power module with a hybrid packaging method. The module has a printed circuit board (PCB) directly soldered on top of direct bounding copper (DBC), with bare dies soldered on DBC and connecting to PCB by bonding wires. Such a structure allows the power loop on both DBC and PCB. This reduces stray inductance through enhanced mutual-inductance cancellation. The introduced PCB can provide extra flexibility in gate-loop optimization, enabling synchronous gate drive between parallel dies. The heat from dies can also be directly dissipated through DBC and the proposed direct-soldered coldplate. A 1.2 kV, 400 A SiC 3L-TNPC module is fabricated with measured loop inductance of 2.5 nH. Faster driving speed by using 0.33Ω gate resistance is enabled to reduce switching loss. Eventually, double-pulse tests and continuous tests are carried out to evaluate the module.

KW - Hybrid packaging

KW - PCB

KW - Power density

KW - Power module

KW - SiC MOSFET

KW - Stray inductance

KW - Three-level

UR - https://www.scopus.com/pages/publications/85115726048

U2 - 10.1109/APEC42165.2021.9487258

DO - 10.1109/APEC42165.2021.9487258

M3 - Conference contribution

AN - SCOPUS:85115726048

T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

SP - 27

EP - 32

BT - 2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021

Y2 - 14 June 2021 through 17 June 2021

ER -

Yuan Z, Emon AI, Huang S, Wang Z, Wang Y, Hassan M et al. A 1.2 kV 400A SiC-MOSFET based 3L-TNPC power module with improved hybrid packaging method for high-density applications. In 2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 27-32. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). doi: 10.1109/APEC42165.2021.9487258

A 1.2 kV 400A SiC-MOSFET based 3L-TNPC power module with improved hybrid packaging method for high-density applications

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Keywords

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