Abstract
We present a high-speed voltage comparator that uses floating gate adaptation to achieve high comparison resolution. The comparator uses nonvolatile charge storage for either offset nulling or automatic programming of a desired offset. We exploit the negative feedback functionality of pFET hot-electron injection to achieve fully automatic offset cancellation. The design has been fabricated in a commercially available 0.35μm process. Experimental results confirm the ability to reduce the variance of the comparator offset 3600× and to accurately program a desired offset with maximum observed residue offset of 469μV and standard deviation 199μV. We achieve controlled injection to accurately program the input offset to voltages uniformly distributed from -1V to 1V. The comparator operates at 1.2GHz with a power consumption of 2.97mW.
| Original language | English |
|---|---|
| Article number | 1466043 |
| Pages (from-to) | 6146-6149 |
| Number of pages | 4 |
| Journal | Proceedings - IEEE International Symposium on Circuits and Systems |
| DOIs | |
| State | Published - 2005 |
| Event | IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan Duration: May 23 2005 → May 26 2005 |
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