A new method of HF control for synthesizing YBCO using the BaF₂ ex situ process

The removal of hydrogen fluoride gas (HF) is a significant problem for the ex situ processing of large area YBCO precursor coated conductors employed in the BaF₂ process. We propose a new solution based on the in situ chemical absorption of HF. This approach allows the design of a simple ex situ reactor, which, in theory, has an extremely large capacity to uniformly absorb HF and permit the uniform growth of crystalline YBCO.