@inproceedings{b8cbbda4d47140868fc4ef456ca67966,
title = "A simple mapping method for elementary screw dislocations in homoepitaxial SiC layers",
abstract = "The etch pits of three different types of dislocations in low-doped homoepitaxial layers have been investigated by KOH etching, optical microscopy, synchrotron white beam X-ray topography (SWBXT), scanning electron microscopy (SEM), and atomic force microscopy (AFM). A simple method by KOH etching and polishing for monitoring elementary screw dislocations in SiC epilayers is proposed. The etch pits of threading screw dislocations were larger and deeper than those of threading edge and basal plane dislocations. The size and depth differences became more pronounced with increase of etching time. The small etch pits of threading edge and basal plane dislocations could be removed selectively by polishing, leaving only the pits of screw dislocations. It is proposed that this technique can be applied to assess the screw dislocation density in a large area and to trace the screw dislocations.",
keywords = "Basal-plane dislocations, Dislocation density, Elementary screw dislocations, Epitaxial layers, Etch pits, KOH etching, Micropipes, Threading edge dislocations",
author = "S. Ha and Vetter, \{W. M.\} and M. Dudley and M. Skowronski",
note = "Publisher Copyright: {\textcopyright} (2002) Trans Tech Publications, Switzerland.; International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 ; Conference date: 28-10-2001 Through 02-11-2001",
year = "2002",
doi = "10.4028Avww.scientific.net/MSF.389-393.443",
language = "English",
isbn = "9780878498949",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "443--446",
editor = "S. Yoshida and S. Nishino and H. Harima and T. Kimoto",
booktitle = "Silicon Carbide and Related Materials 2001",
}