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Activated auger processes and their wavelength dependence in type-I mid-infrared laser diodes

  • Timothy D. Eales
  • , Markus C. Amann
  • , Igor P. Marko
  • , Barnabas A. Ikyo
  • , Alf R. Adams
  • , Alexander Andrejew
  • , Kristijonas Vizbaras
  • , Leon Shterengas
  • , Gregory Belenky
  • , Igor Vurgaftman
  • , Jerry R. Meyer
  • , Stephen J. Sweeney
  • University of Surrey
  • Technical University of Munich
  • Brolis Semiconductors UAB
  • Stony Brook University
  • Naval Research Laboratory

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Type-I quantum well (QW) lasers based on the GaSb material system show attractive characteristics in the mid-infrared [1]. However, as the wavelength (λ) increases in the range of 2-4 μm their performance begins to deteriorate due to increasing Auger recombination [2]. In the Auger process, the energy released from an electron-hole recombination is transferred to a third carrier. In order to develop strategies to suppress Auger recombination, it is crucial to understand the magnitude and nature of the dominant Auger recombination pathway, and their dependencies on the operating λ and temperature (T).

Original languageEnglish
Title of host publication2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728104690
DOIs
StatePublished - Jun 2019
Event2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 - Munich, Germany
Duration: Jun 23 2019Jun 27 2019

Publication series

Name2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

Conference

Conference2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Country/TerritoryGermany
CityMunich
Period06/23/1906/27/19

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