Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm

G. Belenky; L. Shterengas; G. Kipshidze; T. Hosoda; S. Suchalkin

doi:10.1109/LEOS.2008.4688891

Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm

G. Belenky
, L. Shterengas
, G. Kipshidze
, T. Hosoda
, S. Suchalkin

Electrical Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Pages	856-857
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2008.4688891
State	Published - 2008
Event	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 - Newport Beach, CA, United States Duration: Nov 9 2008 → Nov 13 2008

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)	1092-8081

Conference

Conference	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Country/Territory	United States
City	Newport Beach, CA
Period	11/9/08 → 11/13/08

Access to Document

10.1109/LEOS.2008.4688891

Cite this

Belenky, G., Shterengas, L., Kipshidze, G., Hosoda, T., & Suchalkin, S. (2008). Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm. In 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 (pp. 856-857). Article 4688891 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). https://doi.org/10.1109/LEOS.2008.4688891

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title = "Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm",

author = "G. Belenky and L. Shterengas and G. Kipshidze and T. Hosoda and S. Suchalkin",

year = "2008",

doi = "10.1109/LEOS.2008.4688891",

language = "English",

isbn = "9781424419326",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

pages = "856--857",

booktitle = "21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008",

note = "21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 ; Conference date: 09-11-2008 Through 13-11-2008",

}

Belenky, G, Shterengas, L, Kipshidze, G, Hosoda, T & Suchalkin, S 2008, Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm. in 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008., 4688891, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, pp. 856-857, 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008, Newport Beach, CA, United States, 11/9/08. https://doi.org/10.1109/LEOS.2008.4688891

Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm. / Belenky, G.; Shterengas, L.; Kipshidze, G. et al.
21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008. 2008. p. 856-857 4688891 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm

AU - Belenky, G.

AU - Shterengas, L.

AU - Kipshidze, G.

AU - Hosoda, T.

AU - Suchalkin, S.

PY - 2008

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DO - 10.1109/LEOS.2008.4688891

M3 - Conference contribution

AN - SCOPUS:58049167403

SN - 9781424419326

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

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EP - 857

BT - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008

T2 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008

Y2 - 9 November 2008 through 13 November 2008

ER -

Belenky G, Shterengas L, Kipshidze G, Hosoda T, Suchalkin S. Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm. In 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008. 2008. p. 856-857. 4688891. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). doi: 10.1109/LEOS.2008.4688891

Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm

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