AlInAsSb for M-LWIR detectors

W. L. Sarney; S. P. Svensson; D. Wang; D. Donetsky; G. Kipshidze; L. Shterengas; Y. Lin; G. Belenky

doi:10.1016/j.jcrysgro.2015.02.036

AlInAsSb for M-LWIR detectors

W. L. Sarney
, S. P. Svensson
, D. Wang
, D. Donetsky
, G. Kipshidze
, L. Shterengas
, Y. Lin
, G. Belenky

Electrical Engineering

U.S. Army Research Laboratory
Stony Brook University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Growth of unrelaxed and unstrained Al_zIn_1-zAs_ySb_1-y with a lattice constant=6.23 Å was demonstrated. InAs_1-xSb_x with this lattice constant produces a bandgap corresponding to absorption in the long-wavelength infrared range. The structures were grown on GaSb substrates, using a lattice constant shifting buffer layer. Good photoluminescence intensity was shown, ranging from 2.0 to 4.5 μm, demonstrating the potential for development of multi-color infrared detectors that can cover both the mid- and long-wavelength infrared bands.

Original language	English
Pages (from-to)	357-359
Number of pages	3
Journal	Journal of Crystal Growth
Volume	425
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.036
State	Published - Jul 28 2015

Keywords

A1. Crystal structure
A3. Molecular beam epitaxy
A3. Semiconducting III-V materials

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10.1016/j.jcrysgro.2015.02.036

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title = "AlInAsSb for M-LWIR detectors",

abstract = "Growth of unrelaxed and unstrained AlzIn1-zAsySb1-y with a lattice constant=6.23 {\AA} was demonstrated. InAs1-xSbx with this lattice constant produces a bandgap corresponding to absorption in the long-wavelength infrared range. The structures were grown on GaSb substrates, using a lattice constant shifting buffer layer. Good photoluminescence intensity was shown, ranging from 2.0 to 4.5 μm, demonstrating the potential for development of multi-color infrared detectors that can cover both the mid- and long-wavelength infrared bands.",

keywords = "A1. Crystal structure, A3. Molecular beam epitaxy, A3. Semiconducting III-V materials",

author = "Sarney, \{W. L.\} and Svensson, \{S. P.\} and D. Wang and D. Donetsky and G. Kipshidze and L. Shterengas and Y. Lin and G. Belenky",

note = "Publisher Copyright: {\textcopyright} Published by Elsevier B.V.",

year = "2015",

month = jul,

day = "28",

doi = "10.1016/j.jcrysgro.2015.02.036",

language = "English",

volume = "425",

pages = "357--359",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

}

TY - JOUR

T1 - AlInAsSb for M-LWIR detectors

AU - Sarney, W. L.

AU - Svensson, S. P.

AU - Wang, D.

AU - Donetsky, D.

AU - Kipshidze, G.

AU - Shterengas, L.

AU - Lin, Y.

AU - Belenky, G.

PY - 2015/7/28

Y1 - 2015/7/28

N2 - Growth of unrelaxed and unstrained AlzIn1-zAsySb1-y with a lattice constant=6.23 Å was demonstrated. InAs1-xSbx with this lattice constant produces a bandgap corresponding to absorption in the long-wavelength infrared range. The structures were grown on GaSb substrates, using a lattice constant shifting buffer layer. Good photoluminescence intensity was shown, ranging from 2.0 to 4.5 μm, demonstrating the potential for development of multi-color infrared detectors that can cover both the mid- and long-wavelength infrared bands.

AB - Growth of unrelaxed and unstrained AlzIn1-zAsySb1-y with a lattice constant=6.23 Å was demonstrated. InAs1-xSbx with this lattice constant produces a bandgap corresponding to absorption in the long-wavelength infrared range. The structures were grown on GaSb substrates, using a lattice constant shifting buffer layer. Good photoluminescence intensity was shown, ranging from 2.0 to 4.5 μm, demonstrating the potential for development of multi-color infrared detectors that can cover both the mid- and long-wavelength infrared bands.

KW - A1. Crystal structure

KW - A3. Molecular beam epitaxy

KW - A3. Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/84959574496

U2 - 10.1016/j.jcrysgro.2015.02.036

DO - 10.1016/j.jcrysgro.2015.02.036

M3 - Article

AN - SCOPUS:84959574496

SN - 0022-0248

VL - 425

SP - 357

EP - 359

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

AlInAsSb for M-LWIR detectors

Abstract

Keywords

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