TY - GEN
T1 - All-Dry Zinc-Imidazolate Resists for Electron Beam and EUV Lithography
AU - Waltz, Kayley E.
AU - Eckhert, Patrick M.
AU - Corkery, Peter
AU - Ahmad, Mueed
AU - Kraetz, Andrea
AU - Miao, Yurun
AU - Lee, Dennis T.
AU - Abdel-Rahman, Mohammed K.
AU - Lan, Yucheng
AU - Haghi-Ashtiani, Paul
AU - Stein, Aaron
AU - Boscoboinik, J. Anibal
AU - Tsapatsis, Michael
AU - Fairbrother, D. Howard
N1 - Publisher Copyright:
© 2024 SPIE.
PY - 2024
Y1 - 2024
N2 - A high-resolution all-dry resist process is presented that utilizes amorphous zinc-imidazolate (aZnMIm) films deposited by atomic/molecular layer deposition (ALD/MLD), patterned with electron beam lithography (EBL), and developed with a low temperature gas phase etchant, hexafluoroacetylacetone (hfacH), to achieve well-resolved 16 nm thick, 20 nm pitch lines when using an organic-based underlayer. This work is a continuation of previous efforts that explored deposition, dry development, and pattern transfer. Previously, minimum feature sizes of 29 nm thick lines with 40 nm pitch were observed, but here, the use of an underlayer was able to shrink critical feature dimensions to 16 nm.
AB - A high-resolution all-dry resist process is presented that utilizes amorphous zinc-imidazolate (aZnMIm) films deposited by atomic/molecular layer deposition (ALD/MLD), patterned with electron beam lithography (EBL), and developed with a low temperature gas phase etchant, hexafluoroacetylacetone (hfacH), to achieve well-resolved 16 nm thick, 20 nm pitch lines when using an organic-based underlayer. This work is a continuation of previous efforts that explored deposition, dry development, and pattern transfer. Previously, minimum feature sizes of 29 nm thick lines with 40 nm pitch were observed, but here, the use of an underlayer was able to shrink critical feature dimensions to 16 nm.
KW - Atomic/Molecular Layer Deposition
KW - Dry Development
KW - Dry Etching
KW - Electron Beam Lithography
KW - Metal Organic Resist
KW - Solution Free
UR - https://www.scopus.com/pages/publications/85212082170
U2 - 10.1117/12.3050172
DO - 10.1117/12.3050172
M3 - Conference contribution
AN - SCOPUS:85212082170
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - International Conference on Extreme Ultraviolet Lithography 2024
A2 - Ronse, Kurt G.
A2 - Naulleau, Patrick P.
A2 - Gargini, Paolo A.
A2 - Itani, Toshiro
A2 - Franke, Joern-Holger
PB - SPIE
T2 - International Conference on Extreme Ultraviolet Lithography 2024
Y2 - 30 September 2024 through 3 October 2024
ER -