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Amplification of GaSb-Based Diode Lasers in an Erbium-Doped Fluoride Fibre Amplifier

  • Nikolai B. Chichkov
  • , Amit Yadav
  • , Franck Joulain
  • , Solenn Cozic
  • , Semyon V. Smirnov
  • , Leon Shterengas
  • , Julian Scheuermann
  • , Robert Weih
  • , Johannes Koeth
  • , Sven Hofling
  • , Ulf Hinze
  • , Samuel Poulain
  • , Edik U. Rafailov
  • Leibniz University Hannover
  • Aston University
  • Le verre fluoré
  • Nanoplus GmbH
  • University of Würzburg
  • Laser nanoFab GmbH

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Building upon recent advances in GaSb-based diode lasers and Er-doped fluoride fibre technologies, this article demonstrates for the first time the fibre-based amplification of mid-infrared diode lasers in the wavelength range around 2.78 μm. The laser setup consists of a GaSb-based diode laser and a single-stage Er-doped fibre amplifier. Amplification is investigated for continuous wave (CW) and ns-pulsed input signals, generated by gain-modulation of the GaSb-based seed lasers. The experimental results include the demonstration of output powers up to 0.9 W, pulse durations as short as 20 ns, and pulse repetition rates up to 1 MHz. Additionally, the amplification of commercial and custom-made GaSb-based seed lasers is compared and the impact of different fibre end-cap materials on laser performance is analysed.

Original languageEnglish
Article number1500507
JournalIEEE Photonics Journal
Volume15
Issue number1
DOIs
StatePublished - Feb 1 2023

Keywords

  • Erbium
  • ZBLAN
  • fibre laser
  • fluoride fibre
  • gaSb diode laser
  • mid-infrared
  • nanosecond
  • semiconductor laser

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