TY - GEN
T1 - An improved wire-bonded power module with double-end sourced structure
AU - Wang, Miao
AU - Luo, Fang
AU - Xu, Longya
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016
Y1 - 2016
N2 - This paper proposes a wire-bonded design with a unique double-end sourced structure for multi-chip paralleled SiC power modules. The proposed design achieved a reduced power-loop inductance of 7.2 nH, while inheriting the advantages of the conventional wire-bond technology. More importantly, the symmetrical structure of the proposed design brought consistent performances to the paralleled devices. A 1200 V, 60 A SiC MOSFET half-bridge module (3 devices in parallel) was fabricated and tested for verification. It demonstrated suppressed voltage overshoot and improved current-sharing among the devices. In addition, the proposed layout exhibited lower radiation noises, which will cause less interference to the sensitive electronic devices. A converter level design is also presented to accommodate this unique module structure.
AB - This paper proposes a wire-bonded design with a unique double-end sourced structure for multi-chip paralleled SiC power modules. The proposed design achieved a reduced power-loop inductance of 7.2 nH, while inheriting the advantages of the conventional wire-bond technology. More importantly, the symmetrical structure of the proposed design brought consistent performances to the paralleled devices. A 1200 V, 60 A SiC MOSFET half-bridge module (3 devices in parallel) was fabricated and tested for verification. It demonstrated suppressed voltage overshoot and improved current-sharing among the devices. In addition, the proposed layout exhibited lower radiation noises, which will cause less interference to the sensitive electronic devices. A converter level design is also presented to accommodate this unique module structure.
KW - double-end sourced
KW - metal-oxide-semiconductor field-effect-transistor
KW - multi-chip
KW - power module
UR - https://www.scopus.com/pages/publications/85015451113
U2 - 10.1109/ECCE.2016.7854848
DO - 10.1109/ECCE.2016.7854848
M3 - Conference contribution
AN - SCOPUS:85015451113
T3 - ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings
BT - ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016
Y2 - 18 September 2016 through 22 September 2016
ER -