Analysis of dislocations in PVT-grown 6H-SiC through grazing-incidence X-ray topographic images and ray-tracing simulation

Q. Cheng; T. Ailihumaer; H. Peng; Y. Liu; B. Raghothamachar; M. Dudley

doi:10.1149/09806.0133ecst

Analysis of dislocations in PVT-grown 6H-SiC through grazing-incidence X-ray topographic images and ray-tracing simulation

Q. Cheng
, T. Ailihumaer
, H. Peng
, Y. Liu
, B. Raghothamachar
, M. Dudley

Materials Science and Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The superior electronic and physical properties of silicon carbide (SiC) enabled successful applications in electronic and optoelectronic applications. Therefore, understanding the nature and behavior of different dislocations is of great significance towards crystal quality enhancement and device degradation prevention. In this study, synchrotron monochromatic beam X-ray topography (SMBXT) analysis was carried out on a PVT-grown 6H-SiC wafer for recording its grazing-incidence images of all six different 1 1 2- 12 reflections. The distribution of TSDs, TEDs, TMDs and BPDs has been observed on topographic images, and characterized through correlation with ray-tracing simulation. The conjunction of topographic and simulated images in this study has successfully accomplished a direct Burgers vectors determination approach for each type of dislocations, which can provide crucial information for quality improvement of crystal.

Original language	English
Title of host publication	PRiME 2020
Subtitle of host publication	Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10
Editors	T. Anderson, J. K. Hite, R. P. Lynch, C. O'Dwyer, E. A. Douglas, Y. Zhao, M. Dudley, B. Raghothamachar, M. Bakowski, N. Ohtani
Publisher	IOP Publishing Ltd
Pages	133-145
Number of pages	13
Edition	6
ISBN (Electronic)	9781607689010
DOIs	https://doi.org/10.1149/09806.0133ecst
State	Published - 2020
Event	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States Duration: Oct 4 2020 → Oct 9 2020

Publication series

Name	ECS Transactions
Number	6
Volume	98
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/Territory	United States
City	Honolulu
Period	10/4/20 → 10/9/20

Access to Document

10.1149/09806.0133ecst

Cite this

Cheng, Q., Ailihumaer, T., Peng, H., Liu, Y., Raghothamachar, B., & Dudley, M. (2020). Analysis of dislocations in PVT-grown 6H-SiC through grazing-incidence X-ray topographic images and ray-tracing simulation. In T. Anderson, J. K. Hite, R. P. Lynch, C. O'Dwyer, E. A. Douglas, Y. Zhao, M. Dudley, B. Raghothamachar, M. Bakowski, & N. Ohtani (Eds.), PRiME 2020: Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10 (6 ed., pp. 133-145). (ECS Transactions; Vol. 98, No. 6). IOP Publishing Ltd. https://doi.org/10.1149/09806.0133ecst

Cheng, Q. ; Ailihumaer, T. ; Peng, H. et al. / Analysis of dislocations in PVT-grown 6H-SiC through grazing-incidence X-ray topographic images and ray-tracing simulation. PRiME 2020: Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10. editor / T. Anderson ; J. K. Hite ; R. P. Lynch ; C. O'Dwyer ; E. A. Douglas ; Y. Zhao ; M. Dudley ; B. Raghothamachar ; M. Bakowski ; N. Ohtani. 6. ed. IOP Publishing Ltd, 2020. pp. 133-145 (ECS Transactions; 6).

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title = "Analysis of dislocations in PVT-grown 6H-SiC through grazing-incidence X-ray topographic images and ray-tracing simulation",

abstract = "The superior electronic and physical properties of silicon carbide (SiC) enabled successful applications in electronic and optoelectronic applications. Therefore, understanding the nature and behavior of different dislocations is of great significance towards crystal quality enhancement and device degradation prevention. In this study, synchrotron monochromatic beam X-ray topography (SMBXT) analysis was carried out on a PVT-grown 6H-SiC wafer for recording its grazing-incidence images of all six different 1 1 2- 12 reflections. The distribution of TSDs, TEDs, TMDs and BPDs has been observed on topographic images, and characterized through correlation with ray-tracing simulation. The conjunction of topographic and simulated images in this study has successfully accomplished a direct Burgers vectors determination approach for each type of dislocations, which can provide crucial information for quality improvement of crystal.",

author = "Q. Cheng and T. Ailihumaer and H. Peng and Y. Liu and B. Raghothamachar and M. Dudley",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society; Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",

year = "2020",

doi = "10.1149/09806.0133ecst",

language = "English",

series = "ECS Transactions",

publisher = "IOP Publishing Ltd",

number = "6",

pages = "133--145",

editor = "T. Anderson and Hite, \{J. K.\} and Lynch, \{R. P.\} and C. O'Dwyer and Douglas, \{E. A.\} and Y. Zhao and M. Dudley and B. Raghothamachar and M. Bakowski and N. Ohtani",

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Cheng, Q, Ailihumaer, T, Peng, H, Liu, Y, Raghothamachar, B & Dudley, M 2020, Analysis of dislocations in PVT-grown 6H-SiC through grazing-incidence X-ray topographic images and ray-tracing simulation. in T Anderson, JK Hite, RP Lynch, C O'Dwyer, EA Douglas, Y Zhao, M Dudley, B Raghothamachar, M Bakowski & N Ohtani (eds), PRiME 2020: Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10. 6 edn, ECS Transactions, no. 6, vol. 98, IOP Publishing Ltd, pp. 133-145, Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200, Honolulu, United States, 10/4/20. https://doi.org/10.1149/09806.0133ecst

Analysis of dislocations in PVT-grown 6H-SiC through grazing-incidence X-ray topographic images and ray-tracing simulation. / Cheng, Q.; Ailihumaer, T.; Peng, H. et al.
PRiME 2020: Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10. ed. / T. Anderson; J. K. Hite; R. P. Lynch; C. O'Dwyer; E. A. Douglas; Y. Zhao; M. Dudley; B. Raghothamachar; M. Bakowski; N. Ohtani. 6. ed. IOP Publishing Ltd, 2020. p. 133-145 (ECS Transactions; Vol. 98, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analysis of dislocations in PVT-grown 6H-SiC through grazing-incidence X-ray topographic images and ray-tracing simulation

AU - Cheng, Q.

AU - Ailihumaer, T.

AU - Peng, H.

AU - Liu, Y.

AU - Raghothamachar, B.

AU - Dudley, M.

N1 - Publisher Copyright: © The Electrochemical Society

PY - 2020

Y1 - 2020

N2 - The superior electronic and physical properties of silicon carbide (SiC) enabled successful applications in electronic and optoelectronic applications. Therefore, understanding the nature and behavior of different dislocations is of great significance towards crystal quality enhancement and device degradation prevention. In this study, synchrotron monochromatic beam X-ray topography (SMBXT) analysis was carried out on a PVT-grown 6H-SiC wafer for recording its grazing-incidence images of all six different 1 1 2- 12 reflections. The distribution of TSDs, TEDs, TMDs and BPDs has been observed on topographic images, and characterized through correlation with ray-tracing simulation. The conjunction of topographic and simulated images in this study has successfully accomplished a direct Burgers vectors determination approach for each type of dislocations, which can provide crucial information for quality improvement of crystal.

AB - The superior electronic and physical properties of silicon carbide (SiC) enabled successful applications in electronic and optoelectronic applications. Therefore, understanding the nature and behavior of different dislocations is of great significance towards crystal quality enhancement and device degradation prevention. In this study, synchrotron monochromatic beam X-ray topography (SMBXT) analysis was carried out on a PVT-grown 6H-SiC wafer for recording its grazing-incidence images of all six different 1 1 2- 12 reflections. The distribution of TSDs, TEDs, TMDs and BPDs has been observed on topographic images, and characterized through correlation with ray-tracing simulation. The conjunction of topographic and simulated images in this study has successfully accomplished a direct Burgers vectors determination approach for each type of dislocations, which can provide crucial information for quality improvement of crystal.

UR - https://www.scopus.com/pages/publications/85092767838

U2 - 10.1149/09806.0133ecst

DO - 10.1149/09806.0133ecst

M3 - Conference contribution

AN - SCOPUS:85092767838

T3 - ECS Transactions

SP - 133

EP - 145

BT - PRiME 2020

A2 - Anderson, T.

A2 - Hite, J. K.

A2 - Lynch, R. P.

A2 - O'Dwyer, C.

A2 - Douglas, E. A.

A2 - Zhao, Y.

A2 - Dudley, M.

A2 - Raghothamachar, B.

A2 - Bakowski, M.

A2 - Ohtani, N.

PB - IOP Publishing Ltd

T2 - Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200

Y2 - 4 October 2020 through 9 October 2020

ER -

Cheng Q, Ailihumaer T, Peng H, Liu Y, Raghothamachar B, Dudley M. Analysis of dislocations in PVT-grown 6H-SiC through grazing-incidence X-ray topographic images and ray-tracing simulation. In Anderson T, Hite JK, Lynch RP, O'Dwyer C, Douglas EA, Zhao Y, Dudley M, Raghothamachar B, Bakowski M, Ohtani N, editors, PRiME 2020: Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10. 6 ed. IOP Publishing Ltd. 2020. p. 133-145. (ECS Transactions; 6). doi: 10.1149/09806.0133ecst

Analysis of dislocations in PVT-grown 6H-SiC through grazing-incidence X-ray topographic images and ray-tracing simulation

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