Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures

4H-SiC wafers with 12 µm epi layers were blanket implanted to a depth of 12 μm with 5 x10¹⁶ cm^-3 Al ions via Tandem Van de Graaff accelerator located at Brookhaven National Laboratory with energy range of 13.8 to 65.7 MeV at room temperature, 300 °C and 600 °C. High resolution Xray diffraction measurements reveal the implanted layers are characterized by tensile strains. However, the dynamic annealing process reduces the level of tensile strains as the temperature of implantation is increased. Analysis indicates that the implant temperature of 600 °C is not sufficient to minimize lattice damage due to implantation and a higher implantation temperature will be required. This preliminary experiment will guide the optimization of implantation conditions for fabricating super junction devices.