Analysis of temperature dependence of the threshold current in 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

Aleksey D. Andreev; Dmitry V. Donetsky

doi:10.1063/1.124000

Analysis of temperature dependence of the threshold current in 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

Aleksey D. Andreev
, Dmitry V. Donetsky

Electrical Engineering

Stony Brook University
Ioffe Physical Technical Institute

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The temperature dependence of the 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum well (QW) laser threshold current is investigated. The Auger recombination and interband absorption of the QW laser are computed. Results showed that the process with hole excitation from the quantized level in QW to the continuous spectrum is the dominant Auger process of these laser structures. The temperature dependence of the threshold current is calculated based on the heterobarrier leakage current and modal gain of the QW laser.

Original language	English
Pages (from-to)	2743-2745
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	19
DOIs	https://doi.org/10.1063/1.124000
State	Published - May 10 1999

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10.1063/1.124000

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title = "Analysis of temperature dependence of the threshold current in 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers",

abstract = "The temperature dependence of the 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum well (QW) laser threshold current is investigated. The Auger recombination and interband absorption of the QW laser are computed. Results showed that the process with hole excitation from the quantized level in QW to the continuous spectrum is the dominant Auger process of these laser structures. The temperature dependence of the threshold current is calculated based on the heterobarrier leakage current and modal gain of the QW laser.",

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AU - Andreev, Aleksey D.

AU - Donetsky, Dmitry V.

PY - 1999/5/10

Y1 - 1999/5/10

N2 - The temperature dependence of the 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum well (QW) laser threshold current is investigated. The Auger recombination and interband absorption of the QW laser are computed. Results showed that the process with hole excitation from the quantized level in QW to the continuous spectrum is the dominant Auger process of these laser structures. The temperature dependence of the threshold current is calculated based on the heterobarrier leakage current and modal gain of the QW laser.

AB - The temperature dependence of the 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum well (QW) laser threshold current is investigated. The Auger recombination and interband absorption of the QW laser are computed. Results showed that the process with hole excitation from the quantized level in QW to the continuous spectrum is the dominant Auger process of these laser structures. The temperature dependence of the threshold current is calculated based on the heterobarrier leakage current and modal gain of the QW laser.

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U2 - 10.1063/1.124000

DO - 10.1063/1.124000

M3 - Article

AN - SCOPUS:0032607350

SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Analysis of temperature dependence of the threshold current in 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

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