Analysis of the temperature performance of type-II interband cascade lasers

Mikhail V. Kisin; Sergey D. Suchalkin; Gregory Belenky; John D. Bruno; Richard Tober; Serge Luryi

doi:10.1063/1.1814432

Analysis of the temperature performance of type-II interband cascade lasers

Mikhail V. Kisin
, Sergey D. Suchalkin
, Gregory Belenky
, John D. Bruno
, Richard Tober
, Serge Luryi

Electrical Engineering

Stony Brook University
Maxion Technologies, Inc.
U.S. Army Research Laboratory

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The temperature performance of type-II semiconductor lasers has been analyzed by comparing the temperature-concentration dependence for a charge-carrier subsystem at the threshold with steady-state temperature-concentration relationship implied by the carrier heating process. The low material gain characteristic of type-II heterostructures and the high resistance of the thermal link to the heat sink are primarily responsible for limiting the continuous-wave laser operation to low temperatures. We show also that the number of cascades for type-II interband cascade lasers can be optimized with respect to the highest achievable operating temperature.

Original language	English
Pages (from-to)	4310-4312
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	19
DOIs	https://doi.org/10.1063/1.1814432
State	Published - Nov 8 2004

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abstract = "The temperature performance of type-II semiconductor lasers has been analyzed by comparing the temperature-concentration dependence for a charge-carrier subsystem at the threshold with steady-state temperature-concentration relationship implied by the carrier heating process. The low material gain characteristic of type-II heterostructures and the high resistance of the thermal link to the heat sink are primarily responsible for limiting the continuous-wave laser operation to low temperatures. We show also that the number of cascades for type-II interband cascade lasers can be optimized with respect to the highest achievable operating temperature.",

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AU - Kisin, Mikhail V.

AU - Suchalkin, Sergey D.

AU - Belenky, Gregory

AU - Bruno, John D.

AU - Tober, Richard

AU - Luryi, Serge

PY - 2004/11/8

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N2 - The temperature performance of type-II semiconductor lasers has been analyzed by comparing the temperature-concentration dependence for a charge-carrier subsystem at the threshold with steady-state temperature-concentration relationship implied by the carrier heating process. The low material gain characteristic of type-II heterostructures and the high resistance of the thermal link to the heat sink are primarily responsible for limiting the continuous-wave laser operation to low temperatures. We show also that the number of cascades for type-II interband cascade lasers can be optimized with respect to the highest achievable operating temperature.

AB - The temperature performance of type-II semiconductor lasers has been analyzed by comparing the temperature-concentration dependence for a charge-carrier subsystem at the threshold with steady-state temperature-concentration relationship implied by the carrier heating process. The low material gain characteristic of type-II heterostructures and the high resistance of the thermal link to the heat sink are primarily responsible for limiting the continuous-wave laser operation to low temperatures. We show also that the number of cascades for type-II interband cascade lasers can be optimized with respect to the highest achievable operating temperature.

UR - https://www.scopus.com/pages/publications/10844229322

U2 - 10.1063/1.1814432

DO - 10.1063/1.1814432

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JF - Applied Physics Letters

IS - 19

ER -

Analysis of the temperature performance of type-II interband cascade lasers

Abstract

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