Anomalous resonant-tunneling effect in type II heterostructures

E. E. Mendez; V. V. Kuznetsov; D. Chokin; J. D. Bruno

doi:10.1016/S1386-9477(99)00173-3

Anomalous resonant-tunneling effect in type II heterostructures

E. E. Mendez
, V. V. Kuznetsov
, D. Chokin
, J. D. Bruno

Physics and Astronomy

Stony Brook University
U.S. Army Research Laboratory

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We have observed unusual negative differential-conductance features in the magneto-tunneling current-voltage characteristics of GaSb-AlSb-InAs-AlSb-GaSb heterostructures. These features are very narrow (approximately 2 mV) and shift to higher voltage with increasing magnetic field, both properties being in sharp contrast with those of the features associated with conventional resonant tunneling through Landau levels in the InAs well. The new results are explained by a three-step sequential tunneling process, in which two Landau levels - one empty and one occupied - are involved.

Original language	English
Pages (from-to)	335-338
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	6
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(99)00173-3
State	Published - Feb 2000
Event	13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can Duration: Aug 1 1999 → Aug 6 1999

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title = "Anomalous resonant-tunneling effect in type II heterostructures",

abstract = "We have observed unusual negative differential-conductance features in the magneto-tunneling current-voltage characteristics of GaSb-AlSb-InAs-AlSb-GaSb heterostructures. These features are very narrow (approximately 2 mV) and shift to higher voltage with increasing magnetic field, both properties being in sharp contrast with those of the features associated with conventional resonant tunneling through Landau levels in the InAs well. The new results are explained by a three-step sequential tunneling process, in which two Landau levels - one empty and one occupied - are involved.",

author = "Mendez, \{E. E.\} and Kuznetsov, \{V. V.\} and D. Chokin and Bruno, \{J. D.\}",

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pages = "335--338",

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TY - JOUR

T1 - Anomalous resonant-tunneling effect in type II heterostructures

AU - Mendez, E. E.

AU - Kuznetsov, V. V.

AU - Chokin, D.

AU - Bruno, J. D.

PY - 2000/2

Y1 - 2000/2

N2 - We have observed unusual negative differential-conductance features in the magneto-tunneling current-voltage characteristics of GaSb-AlSb-InAs-AlSb-GaSb heterostructures. These features are very narrow (approximately 2 mV) and shift to higher voltage with increasing magnetic field, both properties being in sharp contrast with those of the features associated with conventional resonant tunneling through Landau levels in the InAs well. The new results are explained by a three-step sequential tunneling process, in which two Landau levels - one empty and one occupied - are involved.

AB - We have observed unusual negative differential-conductance features in the magneto-tunneling current-voltage characteristics of GaSb-AlSb-InAs-AlSb-GaSb heterostructures. These features are very narrow (approximately 2 mV) and shift to higher voltage with increasing magnetic field, both properties being in sharp contrast with those of the features associated with conventional resonant tunneling through Landau levels in the InAs well. The new results are explained by a three-step sequential tunneling process, in which two Landau levels - one empty and one occupied - are involved.

UR - https://www.scopus.com/pages/publications/0034139140

U2 - 10.1016/S1386-9477(99)00173-3

DO - 10.1016/S1386-9477(99)00173-3

M3 - Conference article

AN - SCOPUS:0034139140

SN - 1386-9477

VL - 6

SP - 335

EP - 338

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

T2 - 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13)

Y2 - 1 August 1999 through 6 August 1999

ER -

Anomalous resonant-tunneling effect in type II heterostructures

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