@inproceedings{a762804f1e9e464f887ce783c66e8cbd,
title = "BEOL Compatible Ultra-Low Operating Voltage (0.5 V) and Preconfigured Switching Polarization States in Effective 3 nm Ferroelectric HZO Capacitors",
abstract = "We report the record-high remanent polarization value (2Pr 55 μC/cm2) at an ultra-low operating voltage (0.5 V) with effective 3 nm hafnium zirconium oxide (HZO) capacitors. This exceptional ferroelectric property is achieved at a back-end-of-line (BEOL) compatible temperature below 400°C. Moreover, our devices demonstrate configurable ferroelectric saturation characteristics, ensuring reliable and reproducible switching polarization states (Psw). These results potentially allow the design of novel ferroelectric device circuitry. This study highlights the feasibility of extremely low-power ferroelectric applications beyond 0.5 V operation in BEOL.",
keywords = "BEOL compatibility, configurable states, effective 3 nm HZO, reliability, ultra-low voltage",
author = "Minjong Lee and Kim, \{Jin Hyun\} and Le, \{Dan N.\} and Seojun Lee and Song, \{Si Un\} and Rino Choi and Youngbae Ahn and Ryu, \{Seung Wook\} and Cha, \{Pil Ryung\} and Nam, \{Chang Yong\} and Seongbin Park and Jongmug Kang and Kim, \{Si Joon\} and Jiyoung Kim",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024 ; Conference date: 16-06-2024 Through 20-06-2024",
year = "2024",
doi = "10.1109/VLSITechnologyandCir46783.2024.10631444",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024",
}