Bi-directional dual color mid-IR light emitting diodes

S. Suchalkin; Y. Lin; L. Shterengas; G. Kipshidze; D. Westerfeld; G. Belenky

doi:10.1016/j.spmi.2016.09.019

Bi-directional dual color mid-IR light emitting diodes

S. Suchalkin
, Y. Lin
, L. Shterengas
, G. Kipshidze
, D. Westerfeld
, G. Belenky

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We demonstrate a two-contact, bi-directional, dual color light emitting diode with superlattice active regions operated at wavelengths near 4 μm and 8 μm. The operational wavelength of the device is controlled by the bias polarity. A modification of the long wavelength superlattice facilitated hole transport into the corresponding active region and lead to a more than fourfold increase in output optical power.

Original language	English
Pages (from-to)	142-147
Number of pages	6
Journal	Superlattices and Microstructures
Volume	100
DOIs	https://doi.org/10.1016/j.spmi.2016.09.019
State	Published - Dec 1 2016

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10.1016/j.spmi.2016.09.019

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title = "Bi-directional dual color mid-IR light emitting diodes",

abstract = "We demonstrate a two-contact, bi-directional, dual color light emitting diode with superlattice active regions operated at wavelengths near 4 μm and 8 μm. The operational wavelength of the device is controlled by the bias polarity. A modification of the long wavelength superlattice facilitated hole transport into the corresponding active region and lead to a more than fourfold increase in output optical power.",

author = "S. Suchalkin and Y. Lin and L. Shterengas and G. Kipshidze and D. Westerfeld and G. Belenky",

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year = "2016",

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doi = "10.1016/j.spmi.2016.09.019",

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T1 - Bi-directional dual color mid-IR light emitting diodes

AU - Suchalkin, S.

AU - Lin, Y.

AU - Shterengas, L.

AU - Kipshidze, G.

AU - Westerfeld, D.

AU - Belenky, G.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - We demonstrate a two-contact, bi-directional, dual color light emitting diode with superlattice active regions operated at wavelengths near 4 μm and 8 μm. The operational wavelength of the device is controlled by the bias polarity. A modification of the long wavelength superlattice facilitated hole transport into the corresponding active region and lead to a more than fourfold increase in output optical power.

AB - We demonstrate a two-contact, bi-directional, dual color light emitting diode with superlattice active regions operated at wavelengths near 4 μm and 8 μm. The operational wavelength of the device is controlled by the bias polarity. A modification of the long wavelength superlattice facilitated hole transport into the corresponding active region and lead to a more than fourfold increase in output optical power.

UR - https://www.scopus.com/pages/publications/84999779308

U2 - 10.1016/j.spmi.2016.09.019

DO - 10.1016/j.spmi.2016.09.019

M3 - Article

AN - SCOPUS:84999779308

SN - 0749-6036

VL - 100

SP - 142

EP - 147

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Bi-directional dual color mid-IR light emitting diodes

Abstract

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