Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers

P. G. Neudeck; W. Huang; M. Dudley

doi:10.1557/proc-483-285

Breakdown degradation associated with elementary screw dislocations in 4H-SiC p⁺n junction rectifiers

P. G. Neudeck
, W. Huang
, M. Dudley

Materials Science and Engineering

NASA Glenn Research Center

Research output: Contribution to journal › Conference article › peer-review

28 Scopus citations

Abstract

An initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage characteristics of 4H-SiC p⁺n diodes is described. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown current-voltage characteristics knee, and no visible microplasmas in which highly localized breakdown current is concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified synchrotron white beam X ray topography mapping.

Original language	English
Pages (from-to)	285-294
Number of pages	10
Journal	Materials Research Society Symposium - Proceedings
Volume	483
DOIs	https://doi.org/10.1557/proc-483-285
State	Published - 1997
Event	Proceedings of the 1997 Fall MRS Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

Access to Document

10.1557/proc-483-285

Cite this

@article{7dae2361ee5e47768ea2efecff974012,

title = "Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers",

abstract = "An initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage characteristics of 4H-SiC p+n diodes is described. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown current-voltage characteristics knee, and no visible microplasmas in which highly localized breakdown current is concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified synchrotron white beam X ray topography mapping.",

author = "Neudeck, \{P. G.\} and W. Huang and M. Dudley",

year = "1997",

doi = "10.1557/proc-483-285",

language = "English",

volume = "483",

pages = "285--294",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1997 Fall MRS Symposium ; Conference date: 01-12-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers

AU - Neudeck, P. G.

AU - Huang, W.

AU - Dudley, M.

PY - 1997

Y1 - 1997

N2 - An initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage characteristics of 4H-SiC p+n diodes is described. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown current-voltage characteristics knee, and no visible microplasmas in which highly localized breakdown current is concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified synchrotron white beam X ray topography mapping.

AB - An initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage characteristics of 4H-SiC p+n diodes is described. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown current-voltage characteristics knee, and no visible microplasmas in which highly localized breakdown current is concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified synchrotron white beam X ray topography mapping.

UR - https://www.scopus.com/pages/publications/0031344321

U2 - 10.1557/proc-483-285

DO - 10.1557/proc-483-285

M3 - Conference article

AN - SCOPUS:0031344321

SN - 0272-9172

VL - 483

SP - 285

EP - 294

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 Fall MRS Symposium

Y2 - 1 December 1997 through 4 December 1997

ER -

Breakdown degradation associated with elementary screw dislocations in 4H-SiC p⁺n junction rectifiers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this