Breaking through the electrical saturation barrier: 2D- versus 3D-doping in n-type silicon

P. H. Citrin; D. Muller; H. J. Gossmann; R. Vanfleet; P. A. Northrup

doi:10.1016/S0921-4526(99)00465-2

Breaking through the electrical saturation barrier: 2D- versus 3D-doping in n-type silicon

P. H. Citrin
, D. Muller
, H. J. Gossmann
, R. Vanfleet
, P. A. Northrup

Geosciences

Nokia
Cornell University

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

A novel application of scanning transmission electron microscopy, combined with data from X-ray absorption spectroscopy, establishes that high concentrations of n-type Sb dopants distributed within a two-dimensional (2D) layer in Si can contribute up to an order of magnitude higher flee-carrier density than similar dopant concentrations distributed over a three-dimensional region. This difference is explained using a simple model in which formation of electrically deactivating centers is inhibited solely by geometric constraints. It should be possible to extend these ideas for obtaining even higher free-carrier densities in Si from 2D layers of Sb and other Group V donors.

Original language	English
Pages (from-to)	251-255
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00465-2
State	Published - Dec 15 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: Jul 26 1999 → Jul 30 1999

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10.1016/S0921-4526(99)00465-2

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title = "Breaking through the electrical saturation barrier: 2D- versus 3D-doping in n-type silicon",

abstract = "A novel application of scanning transmission electron microscopy, combined with data from X-ray absorption spectroscopy, establishes that high concentrations of n-type Sb dopants distributed within a two-dimensional (2D) layer in Si can contribute up to an order of magnitude higher flee-carrier density than similar dopant concentrations distributed over a three-dimensional region. This difference is explained using a simple model in which formation of electrically deactivating centers is inhibited solely by geometric constraints. It should be possible to extend these ideas for obtaining even higher free-carrier densities in Si from 2D layers of Sb and other Group V donors.",

author = "Citrin, \{P. H.\} and D. Muller and Gossmann, \{H. J.\} and R. Vanfleet and Northrup, \{P. A.\}",

year = "1999",

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journal = "Physica B: Condensed Matter",

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note = "Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) ; Conference date: 26-07-1999 Through 30-07-1999",

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TY - JOUR

T1 - Breaking through the electrical saturation barrier

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

AU - Citrin, P. H.

AU - Muller, D.

AU - Gossmann, H. J.

AU - Vanfleet, R.

AU - Northrup, P. A.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - A novel application of scanning transmission electron microscopy, combined with data from X-ray absorption spectroscopy, establishes that high concentrations of n-type Sb dopants distributed within a two-dimensional (2D) layer in Si can contribute up to an order of magnitude higher flee-carrier density than similar dopant concentrations distributed over a three-dimensional region. This difference is explained using a simple model in which formation of electrically deactivating centers is inhibited solely by geometric constraints. It should be possible to extend these ideas for obtaining even higher free-carrier densities in Si from 2D layers of Sb and other Group V donors.

AB - A novel application of scanning transmission electron microscopy, combined with data from X-ray absorption spectroscopy, establishes that high concentrations of n-type Sb dopants distributed within a two-dimensional (2D) layer in Si can contribute up to an order of magnitude higher flee-carrier density than similar dopant concentrations distributed over a three-dimensional region. This difference is explained using a simple model in which formation of electrically deactivating centers is inhibited solely by geometric constraints. It should be possible to extend these ideas for obtaining even higher free-carrier densities in Si from 2D layers of Sb and other Group V donors.

UR - https://www.scopus.com/pages/publications/0033322170

U2 - 10.1016/S0921-4526(99)00465-2

DO - 10.1016/S0921-4526(99)00465-2

M3 - Conference article

AN - SCOPUS:0033322170

SN - 0921-4526

VL - 273-274

SP - 251

EP - 255

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

Y2 - 26 July 1999 through 30 July 1999

ER -

Breaking through the electrical saturation barrier: 2D- versus 3D-doping in n-type silicon

Abstract

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