Bulk growth of large area SiC crystals

A. R. Powell; J. J. Sumakeris; Y. Khlebnikov; M. J. Paisley; R. T. Leonard; E. Deyneka; S. Gangwal; J. Ambati; V. Tsevtkov; J. Seaman; A. McClure; C. Horton; O. Kramarenko; V. Sakhalkar; M. O’Loughlin; A. A. Burk; J. Q. Guo; M. Dudley; E. Balkas

doi:10.4028/www.scientific.net/MSF.858.5

Bulk growth of large area SiC crystals

A. R. Powell
, J. J. Sumakeris
, Y. Khlebnikov
, M. J. Paisley
, R. T. Leonard
, E. Deyneka
, S. Gangwal
, J. Ambati
, V. Tsevtkov
, J. Seaman
, A. McClure
, C. Horton
, O. Kramarenko
, V. Sakhalkar
, M. O’Loughlin
, A. A. Burk
, J. Q. Guo
, M. Dudley
, E. Balkas

Materials Science and Engineering

Wolfspeed, Inc.
Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

81 Scopus citations

Abstract

The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2015
Editors	Fabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
Publisher	Trans Tech Publications Ltd
Pages	5-10
Number of pages	6
ISBN (Print)	9783035710427
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.858.5
State	Published - 2016
Event	16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy Duration: Oct 4 2015 → Oct 9 2015

Publication series

Name	Materials Science Forum
Volume	858
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
Country/Territory	Italy
City	Sicily
Period	10/4/15 → 10/9/15

Keywords

200mm
Dislocations
PVT
SiC bulk growth
Single crystal
Substrate manufacture

Access to Document

10.4028/www.scientific.net/MSF.858.5

Cite this

Powell, A. R., Sumakeris, J. J., Khlebnikov, Y., Paisley, M. J., Leonard, R. T., Deyneka, E., Gangwal, S., Ambati, J., Tsevtkov, V., Seaman, J., McClure, A., Horton, C., Kramarenko, O., Sakhalkar, V., O’Loughlin, M., Burk, A. A., Guo, J. Q., Dudley, M., & Balkas, E. (2016). Bulk growth of large area SiC crystals. In F. Roccaforte, F. Giannazzo, F. La Via, R. Nipoti, D. Crippa, & M. Saggio (Eds.), Silicon Carbide and Related Materials 2015 (pp. 5-10). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.5

@inproceedings{9f4511b03ec44304a0d898a713fcc92e,

title = "Bulk growth of large area SiC crystals",

abstract = "The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.",

keywords = "200mm, Dislocations, PVT, SiC bulk growth, Single crystal, Substrate manufacture",

author = "Powell, \{A. R.\} and Sumakeris, \{J. J.\} and Y. Khlebnikov and Paisley, \{M. J.\} and Leonard, \{R. T.\} and E. Deyneka and S. Gangwal and J. Ambati and V. Tsevtkov and J. Seaman and A. McClure and C. Horton and O. Kramarenko and V. Sakhalkar and M. O{\textquoteright}Loughlin and Burk, \{A. A.\} and Guo, \{J. Q.\} and M. Dudley and E. Balkas",

note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",

year = "2016",

doi = "10.4028/www.scientific.net/MSF.858.5",

language = "English",

isbn = "9783035710427",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "5--10",

editor = "Fabrizio Roccaforte and Filippo Giannazzo and \{La Via\}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",

booktitle = "Silicon Carbide and Related Materials 2015",

}

Powell, AR, Sumakeris, JJ, Khlebnikov, Y, Paisley, MJ, Leonard, RT, Deyneka, E, Gangwal, S, Ambati, J, Tsevtkov, V, Seaman, J, McClure, A, Horton, C, Kramarenko, O, Sakhalkar, V, O’Loughlin, M, Burk, AA, Guo, JQ, Dudley, M & Balkas, E 2016, Bulk growth of large area SiC crystals. in F Roccaforte, F Giannazzo, F La Via, R Nipoti, D Crippa & M Saggio (eds), Silicon Carbide and Related Materials 2015. Materials Science Forum, vol. 858, Trans Tech Publications Ltd, pp. 5-10, 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, Italy, 10/4/15. https://doi.org/10.4028/www.scientific.net/MSF.858.5

Bulk growth of large area SiC crystals. / Powell, A. R.; Sumakeris, J. J.; Khlebnikov, Y. et al.
Silicon Carbide and Related Materials 2015. ed. / Fabrizio Roccaforte; Filippo Giannazzo; Francesco La Via; Roberta Nipoti; Danilo Crippa; Mario Saggio. Trans Tech Publications Ltd, 2016. p. 5-10 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Bulk growth of large area SiC crystals

AU - Powell, A. R.

AU - Sumakeris, J. J.

AU - Khlebnikov, Y.

AU - Paisley, M. J.

AU - Leonard, R. T.

AU - Deyneka, E.

AU - Gangwal, S.

AU - Ambati, J.

AU - Tsevtkov, V.

AU - Seaman, J.

AU - McClure, A.

AU - Horton, C.

AU - Kramarenko, O.

AU - Sakhalkar, V.

AU - O’Loughlin, M.

AU - Burk, A. A.

AU - Guo, J. Q.

AU - Dudley, M.

AU - Balkas, E.

PY - 2016

Y1 - 2016

N2 - The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.

AB - The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.

KW - 200mm

KW - Dislocations

KW - PVT

KW - SiC bulk growth

KW - Single crystal

KW - Substrate manufacture

UR - https://www.scopus.com/pages/publications/84971524681

U2 - 10.4028/www.scientific.net/MSF.858.5

DO - 10.4028/www.scientific.net/MSF.858.5

M3 - Conference contribution

AN - SCOPUS:84971524681

SN - 9783035710427

T3 - Materials Science Forum

SP - 5

EP - 10

BT - Silicon Carbide and Related Materials 2015

A2 - Roccaforte, Fabrizio

A2 - Giannazzo, Filippo

A2 - La Via, Francesco

A2 - Nipoti, Roberta

A2 - Crippa, Danilo

A2 - Saggio, Mario

PB - Trans Tech Publications Ltd

T2 - 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015

Y2 - 4 October 2015 through 9 October 2015

ER -

Bulk growth of large area SiC crystals

Abstract

Publication series

Conference

Keywords

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