Abstract
A LEED (low-energy electron diffraction) intensity analysis of C {111} 1 × 1 (diamond) has given good agreement with a surface structure which has bulk positions with small relaxation of the first interlayer spacing for both insulating and semiconducting specimens. The truncated-bulk character of C{111} 1 × 1 gives support to the previously determined bulk-like structure of stabilized Si{111} 1 × 1, and casts doubt on the disordered 7 × 7 structure suggested for the stabilized 1 × 1 phase by interpretation of photoemission measurements. In both cases rather than doubt the LEED structure, one can doubt the interpretation of the photoemission measurements.
| Original language | English |
|---|---|
| Pages (from-to) | 191-193 |
| Number of pages | 3 |
| Journal | Solid State Communications |
| Volume | 41 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jan 1982 |
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