Calcium as a nonradiative recombination center in InGaN

Jimmy Xuan Shen; Darshana Wickramaratne; Cyrus E. Dreyer; Audrius Alkauskas; Erin Young; James S. Speck; Chris G. Van De Walle

doi:10.7567/APEX.10.021001

Calcium as a nonradiative recombination center in InGaN

Jimmy Xuan Shen
, Darshana Wickramaratne
, Cyrus E. Dreyer
, Audrius Alkauskas
, Erin Young
, James S. Speck
, Chris G. Van De Walle

University of California at Santa Barbara
Center for Physical Sciences and Technology

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level >1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017cm%3, the Shockley-Read-Hall recombination coefficient, A, of InGaN exceeds 106 s%1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes.

Original language	English
Article number	021001
Journal	Applied Physics Express
Volume	10
Issue number	2
DOIs	https://doi.org/10.7567/APEX.10.021001
State	Published - Feb 2017

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title = "Calcium as a nonradiative recombination center in InGaN",

abstract = "Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level >1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017cm\%3, the Shockley-Read-Hall recombination coefficient, A, of InGaN exceeds 106 s\%1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes.",

author = "Shen, \{Jimmy Xuan\} and Darshana Wickramaratne and Dreyer, \{Cyrus E.\} and Audrius Alkauskas and Erin Young and Speck, \{James S.\} and \{Van De Walle\}, \{Chris G.\}",

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year = "2017",

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doi = "10.7567/APEX.10.021001",

language = "English",

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journal = "Applied Physics Express",

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T1 - Calcium as a nonradiative recombination center in InGaN

AU - Shen, Jimmy Xuan

AU - Wickramaratne, Darshana

AU - Dreyer, Cyrus E.

AU - Alkauskas, Audrius

AU - Young, Erin

AU - Speck, James S.

AU - Van De Walle, Chris G.

PY - 2017/2

Y1 - 2017/2

N2 - Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level >1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017cm%3, the Shockley-Read-Hall recombination coefficient, A, of InGaN exceeds 106 s%1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes.

AB - Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level >1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017cm%3, the Shockley-Read-Hall recombination coefficient, A, of InGaN exceeds 106 s%1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes.

UR - https://www.scopus.com/pages/publications/85011650075

U2 - 10.7567/APEX.10.021001

DO - 10.7567/APEX.10.021001

M3 - Article

AN - SCOPUS:85011650075

SN - 1882-0778

VL - 10

JO - Applied Physics Express

JF - Applied Physics Express

IS - 2

M1 - 021001

ER -

Calcium as a nonradiative recombination center in InGaN

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