@inproceedings{1a14492e64a64a7ba4c69b3d3b734d6e,
title = "Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers",
abstract = "Carrier lifetime of 2ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.",
author = "L. Shterengas and D. Donetsky and M. Kisin and G. Belenky",
year = "2007",
doi = "10.1109/CLEO.2007.4453605",
language = "English",
isbn = "9781557528346",
series = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007",
booktitle = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007",
note = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007 ; Conference date: 06-05-2007 Through 11-05-2007",
}