Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers

L. Shterengas; D. Donetsky; M. Kisin; G. Belenky

doi:10.1109/QELS.2007.4431382

Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers

L. Shterengas
, D. Donetsky
, M. Kisin
, G. Belenky

Electrical Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Carrier lifetime of 2ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.

Original language	English
Title of host publication	2007 Quantum Electronics and Laser Science Conference, QELS
DOIs	https://doi.org/10.1109/QELS.2007.4431382
State	Published - 2007
Event	2007 Quantum Electronics and Laser Science Conference, QELS - Baltimore, MD, United States Duration: May 6 2007 → May 11 2007

Publication series

Name	Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Conference

Conference	2007 Quantum Electronics and Laser Science Conference, QELS
Country/Territory	United States
City	Baltimore, MD
Period	05/6/07 → 05/11/07

Access to Document

10.1109/QELS.2007.4431382

Cite this

Shterengas, L., Donetsky, D., Kisin, M., & Belenky, G. (2007). Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers. In 2007 Quantum Electronics and Laser Science Conference, QELS Article 4431382 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). https://doi.org/10.1109/QELS.2007.4431382

@inproceedings{c2a4215c899248b68151ffca9a50f51d,

title = "Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers",

abstract = "Carrier lifetime of 2ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.",

author = "L. Shterengas and D. Donetsky and M. Kisin and G. Belenky",

year = "2007",

doi = "10.1109/QELS.2007.4431382",

language = "English",

isbn = "1557528349",

series = "Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series",

booktitle = "2007 Quantum Electronics and Laser Science Conference, QELS",

note = "2007 Quantum Electronics and Laser Science Conference, QELS ; Conference date: 06-05-2007 Through 11-05-2007",

}

Shterengas, L , Donetsky, D, Kisin, M & Belenky, G 2007, Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers. in 2007 Quantum Electronics and Laser Science Conference, QELS., 4431382, Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 2007 Quantum Electronics and Laser Science Conference, QELS, Baltimore, MD, United States, 05/6/07. https://doi.org/10.1109/QELS.2007.4431382

Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers. / Shterengas, L.; Donetsky, D.; Kisin, M. et al.
2007 Quantum Electronics and Laser Science Conference, QELS. 2007. 4431382 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers

AU - Shterengas, L.

AU - Donetsky, D.

AU - Kisin, M.

AU - Belenky, G.

PY - 2007

Y1 - 2007

N2 - Carrier lifetime of 2ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.

AB - Carrier lifetime of 2ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.

UR - https://www.scopus.com/pages/publications/51549102842

U2 - 10.1109/QELS.2007.4431382

DO - 10.1109/QELS.2007.4431382

M3 - Conference contribution

AN - SCOPUS:51549102842

SN - 1557528349

SN - 9781557528346

T3 - Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

BT - 2007 Quantum Electronics and Laser Science Conference, QELS

T2 - 2007 Quantum Electronics and Laser Science Conference, QELS

Y2 - 6 May 2007 through 11 May 2007

ER -

Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers

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