Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures

L. Shterengas; A. Ongstad; R. Kaspi; S. Suchalkin; G. Belenky; M. Kisin; D. Donetsky

Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures

L. Shterengas
, A. Ongstad
, R. Kaspi
, S. Suchalkin
, G. Belenky
, M. Kisin
, D. Donetsky

Electrical Engineering

Air Force Research Laboratory
Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures was performed. Difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.

Original language	English
Title of host publication	Quantum Electronics and Laser Science Conference, QELS 2006
Publisher	Optical Society of America
ISBN (Print)	1557528136, 9781557528131
State	Published - 2006
Event	Quantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States Duration: May 21 2006 → May 21 2006

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Quantum Electronics and Laser Science Conference, QELS 2006
Country/Territory	United States
City	Long Beach, CA
Period	05/21/06 → 05/21/06

Cite this

@inproceedings{cadf9fefa0b445ed94da3611f68868d5,

title = "Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures",

abstract = "Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures was performed. Difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.",

author = "L. Shterengas and A. Ongstad and R. Kaspi and S. Suchalkin and G. Belenky and M. Kisin and D. Donetsky",

year = "2006",

language = "English",

isbn = "1557528136",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America",

booktitle = "Quantum Electronics and Laser Science Conference, QELS 2006",

note = "Quantum Electronics and Laser Science Conference, QELS 2006 ; Conference date: 21-05-2006 Through 21-05-2006",

}

Shterengas, L, Ongstad, A, Kaspi, R, Suchalkin, S, Belenky, G, Kisin, M & Donetsky, D 2006, Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures. in Quantum Electronics and Laser Science Conference, QELS 2006. Optics InfoBase Conference Papers, Optical Society of America, Quantum Electronics and Laser Science Conference, QELS 2006, Long Beach, CA, United States, 05/21/06.

TY - GEN

T1 - Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures

AU - Shterengas, L.

AU - Ongstad, A.

AU - Kaspi, R.

AU - Suchalkin, S.

AU - Belenky, G.

AU - Kisin, M.

AU - Donetsky, D.

PY - 2006

Y1 - 2006

N2 - Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures was performed. Difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.

AB - Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures was performed. Difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.

UR - https://www.scopus.com/pages/publications/84899141341

M3 - Conference contribution

AN - SCOPUS:84899141341

SN - 1557528136

SN - 9781557528131

T3 - Optics InfoBase Conference Papers

BT - Quantum Electronics and Laser Science Conference, QELS 2006

PB - Optical Society of America

T2 - Quantum Electronics and Laser Science Conference, QELS 2006

Y2 - 21 May 2006 through 21 May 2006

ER -

Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures

Abstract

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