Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures

L. Shterengas; A. Ongstad; R. Kaspi; S. Suchalkin; G. Belenky; M. Kisin; D. Donetsky

doi:10.1109/CLEO.2006.4628718

Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures

L. Shterengas
, A. Ongstad
, R. Kaspi
, S. Suchalkin
, G. Belenky
, M. Kisin
, D. Donetsky

Electrical Engineering

Air Force Research Laboratory
Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures was performed. Difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs	https://doi.org/10.1109/CLEO.2006.4628718
State	Published - 2006
Event	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States Duration: May 21 2006 → May 26 2006

Publication series

Name	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Conference

Conference	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Country/Territory	United States
City	Long Beach, CA
Period	05/21/06 → 05/26/06

Access to Document

10.1109/CLEO.2006.4628718

Cite this

Shterengas, L., Ongstad, A., Kaspi, R., Suchalkin, S., Belenky, G., Kisin, M., & Donetsky, D. (2006). Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 Article 4628718 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). https://doi.org/10.1109/CLEO.2006.4628718

@inproceedings{5dfed0f21a0a49af80723e726c4d5ae2,

title = "Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures",

abstract = "Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures was performed. Difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.",

author = "L. Shterengas and A. Ongstad and R. Kaspi and S. Suchalkin and G. Belenky and M. Kisin and D. Donetsky",

year = "2006",

doi = "10.1109/CLEO.2006.4628718",

language = "English",

isbn = "1557528136",

series = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",

booktitle = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",

note = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 ; Conference date: 21-05-2006 Through 26-05-2006",

}

Shterengas, L, Ongstad, A, Kaspi, R, Suchalkin, S, Belenky, G, Kisin, M & Donetsky, D 2006, Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures. in Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006., 4628718, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Long Beach, CA, United States, 05/21/06. https://doi.org/10.1109/CLEO.2006.4628718

Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures. / Shterengas, L.; Ongstad, A.; Kaspi, R. et al.
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4628718 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures

AU - Shterengas, L.

AU - Ongstad, A.

AU - Kaspi, R.

AU - Suchalkin, S.

AU - Belenky, G.

AU - Kisin, M.

AU - Donetsky, D.

PY - 2006

Y1 - 2006

N2 - Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures was performed. Difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.

AB - Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures was performed. Difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.

UR - https://www.scopus.com/pages/publications/55649116211

U2 - 10.1109/CLEO.2006.4628718

DO - 10.1109/CLEO.2006.4628718

M3 - Conference contribution

AN - SCOPUS:55649116211

SN - 1557528136

SN - 9781557528131

T3 - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

BT - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

T2 - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Y2 - 21 May 2006 through 26 May 2006

ER -

Shterengas L, Ongstad A, Kaspi R, Suchalkin S, Belenky G, Kisin M et al. Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4628718. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). doi: 10.1109/CLEO.2006.4628718

Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures

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