Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures

Stefan P. Svensson; Dmitry Donetsky; Ding Wang; Patrick Maloney; Gregory Belenky

doi:10.1117/12.849514

Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures

Stefan P. Svensson
, Dmitry Donetsky
, Ding Wang
, Patrick Maloney
, Gregory Belenky

Electrical Engineering

U.S. Army Research Laboratory
Stony Brook University
US Army Night Vision Electronic Sensors Directorate

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

Minority carrier lifetime, photoluminescence (PL), and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLS) grown by molecular beam epitaxy (MBE) on GaSb substrates. The carrier lifetime was determined by time-resolved PL (TRPL) and from analysis of PL response to sine-wavemodulated excitation. Studies of the PL kinetics in the frequency domain allowed for direct lifetime measurements in SLS structures with an excess carrier concentration level of 3.5×10¹⁵ cm ^-3. The minority carrier lifetime at T = 77 K was obtained from the dependence of the carrier lifetime on excitation power. SLS structures with similar absorption wavelengths but with different InAs and GaSb layer thicknesses and with different amounts of strain were investigated and compared with mercury cadmium telluride (MCT) samples. No apparent trend was seen in structures with different number of interfaces per unit length. All SLS lifetime values measured so far are more than an order of magnitude lower than those of MCT.

Original language	English
Title of host publication	Infrared Technology and Applications XXXVI
DOIs	https://doi.org/10.1117/12.849514
State	Published - 2010
Event	Infrared Technology and Applications XXXVI - Orlando, FL, United States Duration: Apr 5 2010 → Apr 9 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7660
ISSN (Print)	0277-786X

Conference

Conference	Infrared Technology and Applications XXXVI
Country/Territory	United States
City	Orlando, FL
Period	04/5/10 → 04/9/10

Keywords

carrier lifetime
Infrared detector
MCT
type II superlattice

Access to Document

10.1117/12.849514

Cite this

@inproceedings{c0ddad976b9d48a2b105337c2227e4fa,

title = "Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures",

abstract = "Minority carrier lifetime, photoluminescence (PL), and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLS) grown by molecular beam epitaxy (MBE) on GaSb substrates. The carrier lifetime was determined by time-resolved PL (TRPL) and from analysis of PL response to sine-wavemodulated excitation. Studies of the PL kinetics in the frequency domain allowed for direct lifetime measurements in SLS structures with an excess carrier concentration level of 3.5×1015 cm -3. The minority carrier lifetime at T = 77 K was obtained from the dependence of the carrier lifetime on excitation power. SLS structures with similar absorption wavelengths but with different InAs and GaSb layer thicknesses and with different amounts of strain were investigated and compared with mercury cadmium telluride (MCT) samples. No apparent trend was seen in structures with different number of interfaces per unit length. All SLS lifetime values measured so far are more than an order of magnitude lower than those of MCT.",

keywords = "carrier lifetime, Infrared detector, MCT, type II superlattice",

author = "Svensson, \{Stefan P.\} and Dmitry Donetsky and Ding Wang and Patrick Maloney and Gregory Belenky",

year = "2010",

doi = "10.1117/12.849514",

language = "English",

isbn = "9780819481245",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Infrared Technology and Applications XXXVI",

note = "Infrared Technology and Applications XXXVI ; Conference date: 05-04-2010 Through 09-04-2010",

}

Svensson, SP, Donetsky, D, Wang, D, Maloney, P & Belenky, G 2010, Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures. in Infrared Technology and Applications XXXVI., 76601V, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7660, Infrared Technology and Applications XXXVI, Orlando, FL, United States, 04/5/10. https://doi.org/10.1117/12.849514

Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures. / Svensson, Stefan P.; Donetsky, Dmitry; Wang, Ding et al.
Infrared Technology and Applications XXXVI. 2010. 76601V (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7660).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures

AU - Svensson, Stefan P.

AU - Donetsky, Dmitry

AU - Wang, Ding

AU - Maloney, Patrick

AU - Belenky, Gregory

PY - 2010

Y1 - 2010

N2 - Minority carrier lifetime, photoluminescence (PL), and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLS) grown by molecular beam epitaxy (MBE) on GaSb substrates. The carrier lifetime was determined by time-resolved PL (TRPL) and from analysis of PL response to sine-wavemodulated excitation. Studies of the PL kinetics in the frequency domain allowed for direct lifetime measurements in SLS structures with an excess carrier concentration level of 3.5×1015 cm -3. The minority carrier lifetime at T = 77 K was obtained from the dependence of the carrier lifetime on excitation power. SLS structures with similar absorption wavelengths but with different InAs and GaSb layer thicknesses and with different amounts of strain were investigated and compared with mercury cadmium telluride (MCT) samples. No apparent trend was seen in structures with different number of interfaces per unit length. All SLS lifetime values measured so far are more than an order of magnitude lower than those of MCT.

AB - Minority carrier lifetime, photoluminescence (PL), and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLS) grown by molecular beam epitaxy (MBE) on GaSb substrates. The carrier lifetime was determined by time-resolved PL (TRPL) and from analysis of PL response to sine-wavemodulated excitation. Studies of the PL kinetics in the frequency domain allowed for direct lifetime measurements in SLS structures with an excess carrier concentration level of 3.5×1015 cm -3. The minority carrier lifetime at T = 77 K was obtained from the dependence of the carrier lifetime on excitation power. SLS structures with similar absorption wavelengths but with different InAs and GaSb layer thicknesses and with different amounts of strain were investigated and compared with mercury cadmium telluride (MCT) samples. No apparent trend was seen in structures with different number of interfaces per unit length. All SLS lifetime values measured so far are more than an order of magnitude lower than those of MCT.

KW - carrier lifetime

KW - Infrared detector

KW - MCT

KW - type II superlattice

UR - https://www.scopus.com/pages/publications/79953707372

U2 - 10.1117/12.849514

DO - 10.1117/12.849514

M3 - Conference contribution

AN - SCOPUS:79953707372

SN - 9780819481245

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Infrared Technology and Applications XXXVI

T2 - Infrared Technology and Applications XXXVI

Y2 - 5 April 2010 through 9 April 2010

ER -

Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this