Carrier lifetime measurements in long-wave infrared InAs/GaSb superlattices under low excitation conditions

Ding Wang; Dmitri Donetsky; Seungyong Jung; Gregory Belenky

doi:10.1007/s11664-012-2216-1

Carrier lifetime measurements in long-wave infrared InAs/GaSb superlattices under low excitation conditions

Ding Wang
, Dmitri Donetsky
, Seungyong Jung
, Gregory Belenky

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Minority carrier lifetime in long-wave infrared (LWIR) type II InAs/GaSb superlattices was studied using the optical modulation response (OMR) technique in wide ranges of excitation and temperature. The measured carrier lifetime was found to increase superexponentially with decreasing excitation power density below the level of 1 mW/cm2 to 2 mW/cm2. The phenomenon was qualitatively explained by the presence of shallow trapping centers.

Original language	English
Pages (from-to)	3027-3030
Number of pages	4
Journal	Journal of Electronic Materials
Volume	41
Issue number	11
DOIs	https://doi.org/10.1007/s11664-012-2216-1
State	Published - Nov 2012

Keywords

Carrier lifetime
Long-wave infrared
Superlattice

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10.1007/s11664-012-2216-1

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title = "Carrier lifetime measurements in long-wave infrared InAs/GaSb superlattices under low excitation conditions",

abstract = "Minority carrier lifetime in long-wave infrared (LWIR) type II InAs/GaSb superlattices was studied using the optical modulation response (OMR) technique in wide ranges of excitation and temperature. The measured carrier lifetime was found to increase superexponentially with decreasing excitation power density below the level of 1 mW/cm2 to 2 mW/cm2. The phenomenon was qualitatively explained by the presence of shallow trapping centers.",

keywords = "Carrier lifetime, Long-wave infrared, Superlattice",

author = "Ding Wang and Dmitri Donetsky and Seungyong Jung and Gregory Belenky",

year = "2012",

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journal = "Journal of Electronic Materials",

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T1 - Carrier lifetime measurements in long-wave infrared InAs/GaSb superlattices under low excitation conditions

AU - Wang, Ding

AU - Donetsky, Dmitri

AU - Jung, Seungyong

AU - Belenky, Gregory

PY - 2012/11

Y1 - 2012/11

N2 - Minority carrier lifetime in long-wave infrared (LWIR) type II InAs/GaSb superlattices was studied using the optical modulation response (OMR) technique in wide ranges of excitation and temperature. The measured carrier lifetime was found to increase superexponentially with decreasing excitation power density below the level of 1 mW/cm2 to 2 mW/cm2. The phenomenon was qualitatively explained by the presence of shallow trapping centers.

AB - Minority carrier lifetime in long-wave infrared (LWIR) type II InAs/GaSb superlattices was studied using the optical modulation response (OMR) technique in wide ranges of excitation and temperature. The measured carrier lifetime was found to increase superexponentially with decreasing excitation power density below the level of 1 mW/cm2 to 2 mW/cm2. The phenomenon was qualitatively explained by the presence of shallow trapping centers.

KW - Carrier lifetime

KW - Long-wave infrared

KW - Superlattice

UR - https://www.scopus.com/pages/publications/84868560721

U2 - 10.1007/s11664-012-2216-1

DO - 10.1007/s11664-012-2216-1

M3 - Article

AN - SCOPUS:84868560721

SN - 0361-5235

VL - 41

SP - 3027

EP - 3030

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 11

ER -

Carrier lifetime measurements in long-wave infrared InAs/GaSb superlattices under low excitation conditions

Abstract

Keywords

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