Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

Dmitry Donetsky; Stefan P. Svensson; Leonid E. Vorobjev; Gregory Belenky

doi:10.1063/1.3267103

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

Dmitry Donetsky
, Stefan P. Svensson
, Leonid E. Vorobjev
, Gregory Belenky

Electrical Engineering

U.S. Army Research Laboratory
Peter the Great St. Petersburg Polytechnic University
Stony Brook University

Research output: Contribution to journal › Article › peer-review

149 Scopus citations

Abstract

Minority carrier lifetime and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLSs) grown by molecular beam epitaxy on GaSb substrates. The carrier lifetime in 200-period undoped 7 ML InAs/8 ML GaSb SLS with AlSb carrier confinement layers was determined by time-resolved photoluminescence (PL) and from analysis of PL response to sinwave-modulated excitation. Study of PL kinetics in frequency domain allowed for direct lifetime measurements with the excess carrier concentration level of 3.5 × 10¹⁵ cm^-3. The minority carrier lifetime of 80 ns at T=77 K was obtained from dependence of the carrier lifetime on excitation power.

Original language	English
Article number	212104
Journal	Applied Physics Letters
Volume	95
Issue number	21
DOIs	https://doi.org/10.1063/1.3267103
State	Published - 2009

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title = "Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures",

abstract = "Minority carrier lifetime and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLSs) grown by molecular beam epitaxy on GaSb substrates. The carrier lifetime in 200-period undoped 7 ML InAs/8 ML GaSb SLS with AlSb carrier confinement layers was determined by time-resolved photoluminescence (PL) and from analysis of PL response to sinwave-modulated excitation. Study of PL kinetics in frequency domain allowed for direct lifetime measurements with the excess carrier concentration level of 3.5 × 1015 cm-3. The minority carrier lifetime of 80 ns at T=77 K was obtained from dependence of the carrier lifetime on excitation power.",

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doi = "10.1063/1.3267103",

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journal = "Applied Physics Letters",

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AU - Donetsky, Dmitry

AU - Svensson, Stefan P.

AU - Vorobjev, Leonid E.

AU - Belenky, Gregory

PY - 2009

Y1 - 2009

N2 - Minority carrier lifetime and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLSs) grown by molecular beam epitaxy on GaSb substrates. The carrier lifetime in 200-period undoped 7 ML InAs/8 ML GaSb SLS with AlSb carrier confinement layers was determined by time-resolved photoluminescence (PL) and from analysis of PL response to sinwave-modulated excitation. Study of PL kinetics in frequency domain allowed for direct lifetime measurements with the excess carrier concentration level of 3.5 × 1015 cm-3. The minority carrier lifetime of 80 ns at T=77 K was obtained from dependence of the carrier lifetime on excitation power.

AB - Minority carrier lifetime and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLSs) grown by molecular beam epitaxy on GaSb substrates. The carrier lifetime in 200-period undoped 7 ML InAs/8 ML GaSb SLS with AlSb carrier confinement layers was determined by time-resolved photoluminescence (PL) and from analysis of PL response to sinwave-modulated excitation. Study of PL kinetics in frequency domain allowed for direct lifetime measurements with the excess carrier concentration level of 3.5 × 1015 cm-3. The minority carrier lifetime of 80 ns at T=77 K was obtained from dependence of the carrier lifetime on excitation power.

UR - https://www.scopus.com/pages/publications/71549172507

U2 - 10.1063/1.3267103

DO - 10.1063/1.3267103

M3 - Article

AN - SCOPUS:71549172507

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212104

ER -

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

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