Carrier recombination in MBE grown InGa0.2AsSb0.27 and InAsSb0.09 alloys lattice-matched to GaSb for mid-wave infrared device applications

Jingze Zhao; Dmitri Donetski; Gela Kipshidze; Leon Shterengas

doi:10.1063/5.0273583

Carrier recombination in MBE grown InGa_0.2AsSb_0.27 and InAsSb_0.09 alloys lattice-matched to GaSb for mid-wave infrared device applications

Jingze Zhao
, Dmitri Donetski
, Gela Kipshidze
, Leon Shterengas

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This study presents the molecular beam epitaxy growth of the indium-rich InGa_0.2AsSb_0.27 alloy with a 0.26 eV bandgap, lattice-matched (LM) to GaSb. A significant finding is the high material metrics, particularly the minority carrier lifetime (0.3 μs) and the background carrier concentration (8 × 10¹⁵ cm⁻³), in which the product reaches half the value of the reference InAsSb_0.09 alloy. This indicates the suitability of indium-rich InGa_xAsSb_y alloys LM to GaSb for low-dark-current, high-quantum-efficiency detectors for the entire mid-wave infrared wavelength range.

Original language	English
Article number	041105
Journal	Applied Physics Letters
Volume	127
Issue number	4
DOIs	https://doi.org/10.1063/5.0273583
State	Published - Jul 28 2025

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title = "Carrier recombination in MBE grown InGa0.2AsSb0.27 and InAsSb0.09 alloys lattice-matched to GaSb for mid-wave infrared device applications",

abstract = "This study presents the molecular beam epitaxy growth of the indium-rich InGa0.2AsSb0.27 alloy with a 0.26 eV bandgap, lattice-matched (LM) to GaSb. A significant finding is the high material metrics, particularly the minority carrier lifetime (0.3 μs) and the background carrier concentration (8 × 1015 cm−3), in which the product reaches half the value of the reference InAsSb0.09 alloy. This indicates the suitability of indium-rich InGaxAsSby alloys LM to GaSb for low-dark-current, high-quantum-efficiency detectors for the entire mid-wave infrared wavelength range.",

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T1 - Carrier recombination in MBE grown InGa0.2AsSb0.27 and InAsSb0.09 alloys lattice-matched to GaSb for mid-wave infrared device applications

AU - Zhao, Jingze

AU - Donetski, Dmitri

AU - Kipshidze, Gela

AU - Shterengas, Leon

PY - 2025/7/28

Y1 - 2025/7/28

N2 - This study presents the molecular beam epitaxy growth of the indium-rich InGa0.2AsSb0.27 alloy with a 0.26 eV bandgap, lattice-matched (LM) to GaSb. A significant finding is the high material metrics, particularly the minority carrier lifetime (0.3 μs) and the background carrier concentration (8 × 1015 cm−3), in which the product reaches half the value of the reference InAsSb0.09 alloy. This indicates the suitability of indium-rich InGaxAsSby alloys LM to GaSb for low-dark-current, high-quantum-efficiency detectors for the entire mid-wave infrared wavelength range.

AB - This study presents the molecular beam epitaxy growth of the indium-rich InGa0.2AsSb0.27 alloy with a 0.26 eV bandgap, lattice-matched (LM) to GaSb. A significant finding is the high material metrics, particularly the minority carrier lifetime (0.3 μs) and the background carrier concentration (8 × 1015 cm−3), in which the product reaches half the value of the reference InAsSb0.09 alloy. This indicates the suitability of indium-rich InGaxAsSby alloys LM to GaSb for low-dark-current, high-quantum-efficiency detectors for the entire mid-wave infrared wavelength range.

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DO - 10.1063/5.0273583

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VL - 127

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041105

ER -

Carrier recombination in MBE grown InGa_0.2AsSb_0.27 and InAsSb_0.09 alloys lattice-matched to GaSb for mid-wave infrared device applications

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