Abstract
We have observed an electric-field-induced change in the dimensionality of excitons in superlattices, from three to quasi-two dimensions. The exciton binding energy of a (40 AIS)/(40 AIS) GaAs/(GaAl)As superlattice, determined from low-temperature photocurrent experiments, increases more than 6 meV by the action of an electric field perpendicular to the superlattice layers. This sharp increase, from nearly the bulk value of GaAs at very low fields to the isolated-quantum-well value at high fields, is a direct consequence of the Stark localization of electrons and holes in superlattices.
| Original language | English |
|---|---|
| Pages (from-to) | 1676-1679 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 41 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1990 |
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