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Characterization and application of a GE amorphous silicon flat panel detector in a synchrotron light source

  • J. H. Lee
  • , J. Almer
  • , C. Aydner
  • , J. Bernier
  • , K. Chapman
  • , P. Chupas
  • , D. Haeffner
  • , K. Kump
  • , P. L. Lee
  • , U. Lienert
  • , A. Miceli
  • , G. Vera
  • United States Department of Energy
  • Los Alamos National Laboratory
  • GE Healthcare United States

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Characterization, in the language of synchrotron radiation, was performed on a GE Revolution 41RT flat panel detector using the X-ray light source at the Advanced Photon Source (APS). The detector has an active area of 41×41 cm2 with 200×200 μm2 pixel size. The nominal working photon energy is around 80 keV. Modulation transfer function (MTF) was measured in terms of line spread function (LSF) using a 25 μm×1 cm tungsten slit. Memory effects of the detector elements, called lag, were also measured. The large area and fast data capturing rate -8 fps in unbinned mode, 30 fps in binned or region of interest (ROI) mode-make the GE flat panel detector a unique and very versatile detector for synchrotron experiments. In particular, we present data from pair distribution function (PDF) measurements to demonstrate the special features of this detector.

Original languageEnglish
Pages (from-to)182-184
Number of pages3
JournalNuclear Inst. and Methods in Physics Research, A
Volume582
Issue number1
DOIs
StatePublished - Nov 11 2007

Keywords

  • Flat panel detector
  • Pair distribution function
  • Stress-strain measurement

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