Characterization and growth mechanism of B12As2 epitaxial layers grown on (1-100) 15R-SiC

Hui Chen; Guan Wang; Michael Dudley; Zhou Xu; H. James. Edgar; Tim Batten; Martin Kuball; Lihua Zhang; Yimei Zhu

Characterization and growth mechanism of B₁₂As₂ epitaxial layers grown on (1-100) 15R-SiC

Hui Chen
, Guan Wang
, Michael Dudley
, Zhou Xu
, H. James. Edgar
, Tim Batten
, Martin Kuball
, Lihua Zhang
, Yimei Zhu

Materials Science and Engineering

Stony Brook University
Kansas State University
University of Bristol
Brookhaven National Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A systematic study of the heteroepitaxial growth of B₁₂As ₂ on m-plane 15R-SiC is presented. In contrast to previous studies of B₁₂As₂ on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B ₁₂As₂ was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1̄00 )15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of B₁₂AS₂ on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B₁₂AS₂ epilayers.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Silicon Carbide 2008 - Materials, Processing and Devices
Pages	181-186
Number of pages	6
State	Published - 2008
Event	Silicon Carbide 2008 - Materials, Processing and Devices - San Francisco, CA, United States Duration: Mar 25 2008 → Mar 27 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1069
ISSN (Print)	0272-9172

Conference

Conference	Silicon Carbide 2008 - Materials, Processing and Devices
Country/Territory	United States
City	San Francisco, CA
Period	03/25/08 → 03/27/08

Cite this

Chen, H., Wang, G., Dudley, M., Xu, Z., James. Edgar, H., Batten, T., Kuball, M., Zhang, L., & Zhu, Y. (2008). Characterization and growth mechanism of B₁₂As₂ epitaxial layers grown on (1-100) 15R-SiC. In Materials Research Society Symposium Proceedings - Silicon Carbide 2008 - Materials, Processing and Devices (pp. 181-186). (Materials Research Society Symposium Proceedings; Vol. 1069).

@inproceedings{67b99adb016647a59d1944eec99fa1ad,

title = "Characterization and growth mechanism of B12As2 epitaxial layers grown on (1-100) 15R-SiC",

abstract = "A systematic study of the heteroepitaxial growth of B12As 2 on m-plane 15R-SiC is presented. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B 12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane ({\=1}00 )15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of B12AS2 on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12AS2 epilayers.",

author = "Hui Chen and Guan Wang and Michael Dudley and Zhou Xu and \{James. Edgar\}, H. and Tim Batten and Martin Kuball and Lihua Zhang and Yimei Zhu",

year = "2008",

language = "English",

isbn = "9781605110394",

series = "Materials Research Society Symposium Proceedings",

pages = "181--186",

booktitle = "Materials Research Society Symposium Proceedings - Silicon Carbide 2008 - Materials, Processing and Devices",

note = "Silicon Carbide 2008 - Materials, Processing and Devices ; Conference date: 25-03-2008 Through 27-03-2008",

}

Chen, H, Wang, G, Dudley, M, Xu, Z, James. Edgar, H, Batten, T, Kuball, M, Zhang, L & Zhu, Y 2008, Characterization and growth mechanism of B₁₂As₂ epitaxial layers grown on (1-100) 15R-SiC. in Materials Research Society Symposium Proceedings - Silicon Carbide 2008 - Materials, Processing and Devices. Materials Research Society Symposium Proceedings, vol. 1069, pp. 181-186, Silicon Carbide 2008 - Materials, Processing and Devices, San Francisco, CA, United States, 03/25/08.

Characterization and growth mechanism of B₁₂As₂ epitaxial layers grown on (1-100) 15R-SiC. / Chen, Hui; Wang, Guan; Dudley, Michael et al.
Materials Research Society Symposium Proceedings - Silicon Carbide 2008 - Materials, Processing and Devices. 2008. p. 181-186 (Materials Research Society Symposium Proceedings; Vol. 1069).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization and growth mechanism of B12As2 epitaxial layers grown on (1-100) 15R-SiC

AU - Chen, Hui

AU - Wang, Guan

AU - Dudley, Michael

AU - Xu, Zhou

AU - James. Edgar, H.

AU - Batten, Tim

AU - Kuball, Martin

AU - Zhang, Lihua

AU - Zhu, Yimei

PY - 2008

Y1 - 2008

N2 - A systematic study of the heteroepitaxial growth of B12As 2 on m-plane 15R-SiC is presented. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B 12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1̄00 )15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of B12AS2 on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12AS2 epilayers.

AB - A systematic study of the heteroepitaxial growth of B12As 2 on m-plane 15R-SiC is presented. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B 12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1̄00 )15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of B12AS2 on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12AS2 epilayers.

UR - https://www.scopus.com/pages/publications/55849089014

M3 - Conference contribution

AN - SCOPUS:55849089014

SN - 9781605110394

T3 - Materials Research Society Symposium Proceedings

SP - 181

EP - 186

BT - Materials Research Society Symposium Proceedings - Silicon Carbide 2008 - Materials, Processing and Devices

T2 - Silicon Carbide 2008 - Materials, Processing and Devices

Y2 - 25 March 2008 through 27 March 2008

ER -

Characterization and growth mechanism of B₁₂As₂ epitaxial layers grown on (1-100) 15R-SiC

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