@inproceedings{9a985fd714934407a4793f13c5dd8439,
title = "Characterization of 100 mm diameter 4H-Silicon carbide crystals with extremely low basal plane dislocation density",
abstract = "Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4HSiC wafers with extremely low BPD densities (3-4 {\texttimes} 102 cm-2). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.",
keywords = "Basal plane dislocation, Frank-Read source, Glissile, Pinning point, Sessile",
author = "M. Dudley and N. Zhang and Y. Zhang and B. Raghothamachar and S. Byrappa and G. Choi and Sanchez, \{E. K.\} and D. Hansen and R. Drachev and Loboda, \{M. J.\}",
year = "2010",
doi = "10.4028/www.scientific.net/MSF.645-648.291",
language = "English",
isbn = "0878492798",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "291--294",
booktitle = "Silicon Carbide and Related Materials 2009",
note = "13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 ; Conference date: 11-10-2009 Through 16-10-2009",
}