Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

Philip G. Neudeck; J. Anthony Powell; David J. Spry; Andrew J. Trunek; Xianrong Huang; William M. Vetter; Michael Dudley; Marek Skowronski; Jinqiang Liu

doi:10.4028/www.scientific.net/msf.433-436.213

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

Philip G. Neudeck
, J. Anthony Powell
, David J. Spry
, Andrew J. Trunek
, Xianrong Huang
, William M. Vetter
, Michael Dudley
, Marek Skowronski
, Jinqiang Liu

Materials Science and Engineering

NASA Glenn Research Center
Ohio Aerospace Institute
Stony Brook University
Carnegie Mellon University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

This paper reports detailed structural characterization of 3C-SiC heteroepitaxial films grown on 4H- and 6H-SiC mesa surfaces. 3C-SiC heterofilms grown by the "step-free surface heteroepitaxy" process, free of double-positioning boundary (DPB) and stacking-fault (SF) defects, were compared to less-optimized 3C-SiC heterofilms using High Resolution X-ray Diffraction (HRXRD), High Resolution Cross-sectional Transmission Electron Microscopy (HRXTEM), molten potassium hydroxide (KOH) etching, and dry thermal oxidation. The results suggest that step free surface heteroepitaxy enables remarkably benign partial lattice mismatch strain relief during heterofilm growth.

Original language	English
Title of host publication	Materials Science Forum
Editors	Peder Bergman, Erik Janzén
Publisher	Trans Tech Publications Ltd
Pages	213-216
Number of pages	4
ISBN (Print)	9780878499205
DOIs	https://doi.org/10.4028/www.scientific.net/msf.433-436.213
State	Published - 2003
Event	Proceedings of the 4th European Conference on Silicon Carbide and Related Materials - Linkoping, Sweden Duration: Sep 2 2002 → Sep 5 2002

Publication series

Name	Materials Science Forum
Volume	433-436
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	Proceedings of the 4th European Conference on Silicon Carbide and Related Materials
Country/Territory	Sweden
City	Linkoping
Period	09/2/02 → 09/5/02

Keywords

3C-SiC
Cubic-SiC
Epitaxial Growth
Hetero-Epitaxy
Step-Free Surface Hetero-Epitaxy

Access to Document

10.4028/www.scientific.net/msf.433-436.213

Cite this

Neudeck, P. G., Powell, J. A., Spry, D. J., Trunek, A. J., Huang, X., Vetter, W. M., Dudley, M., Skowronski, M., & Liu, J. (2003). Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy. In P. Bergman, & E. Janzén (Eds.), Materials Science Forum (pp. 213-216). (Materials Science Forum; Vol. 433-436). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/msf.433-436.213

@inproceedings{5066f1dcd18c4431bc73d78de88856c2,

title = "Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy",

abstract = "This paper reports detailed structural characterization of 3C-SiC heteroepitaxial films grown on 4H- and 6H-SiC mesa surfaces. 3C-SiC heterofilms grown by the {"}step-free surface heteroepitaxy{"} process, free of double-positioning boundary (DPB) and stacking-fault (SF) defects, were compared to less-optimized 3C-SiC heterofilms using High Resolution X-ray Diffraction (HRXRD), High Resolution Cross-sectional Transmission Electron Microscopy (HRXTEM), molten potassium hydroxide (KOH) etching, and dry thermal oxidation. The results suggest that step free surface heteroepitaxy enables remarkably benign partial lattice mismatch strain relief during heterofilm growth.",

keywords = "3C-SiC, Cubic-SiC, Epitaxial Growth, Hetero-Epitaxy, Step-Free Surface Hetero-Epitaxy",

author = "Neudeck, \{Philip G.\} and Powell, \{J. Anthony\} and Spry, \{David J.\} and Trunek, \{Andrew J.\} and Xianrong Huang and Vetter, \{William M.\} and Michael Dudley and Marek Skowronski and Jinqiang Liu",

year = "2003",

doi = "10.4028/www.scientific.net/msf.433-436.213",

language = "English",

isbn = "9780878499205",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "213--216",

editor = "Peder Bergman and Erik Janz{\'e}n",

booktitle = "Materials Science Forum",

note = "Proceedings of the 4th European Conference on Silicon Carbide and Related Materials ; Conference date: 02-09-2002 Through 05-09-2002",

}

Neudeck, PG, Powell, JA, Spry, DJ, Trunek, AJ, Huang, X, Vetter, WM, Dudley, M, Skowronski, M & Liu, J 2003, Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy. in P Bergman & E Janzén (eds), Materials Science Forum. Materials Science Forum, vol. 433-436, Trans Tech Publications Ltd, pp. 213-216, Proceedings of the 4th European Conference on Silicon Carbide and Related Materials, Linkoping, Sweden, 09/2/02. https://doi.org/10.4028/www.scientific.net/msf.433-436.213

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy. / Neudeck, Philip G.; Powell, J. Anthony; Spry, David J. et al.
Materials Science Forum. ed. / Peder Bergman; Erik Janzén. Trans Tech Publications Ltd, 2003. p. 213-216 (Materials Science Forum; Vol. 433-436).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

AU - Neudeck, Philip G.

AU - Powell, J. Anthony

AU - Spry, David J.

AU - Trunek, Andrew J.

AU - Huang, Xianrong

AU - Vetter, William M.

AU - Dudley, Michael

AU - Skowronski, Marek

AU - Liu, Jinqiang

PY - 2003

Y1 - 2003

N2 - This paper reports detailed structural characterization of 3C-SiC heteroepitaxial films grown on 4H- and 6H-SiC mesa surfaces. 3C-SiC heterofilms grown by the "step-free surface heteroepitaxy" process, free of double-positioning boundary (DPB) and stacking-fault (SF) defects, were compared to less-optimized 3C-SiC heterofilms using High Resolution X-ray Diffraction (HRXRD), High Resolution Cross-sectional Transmission Electron Microscopy (HRXTEM), molten potassium hydroxide (KOH) etching, and dry thermal oxidation. The results suggest that step free surface heteroepitaxy enables remarkably benign partial lattice mismatch strain relief during heterofilm growth.

AB - This paper reports detailed structural characterization of 3C-SiC heteroepitaxial films grown on 4H- and 6H-SiC mesa surfaces. 3C-SiC heterofilms grown by the "step-free surface heteroepitaxy" process, free of double-positioning boundary (DPB) and stacking-fault (SF) defects, were compared to less-optimized 3C-SiC heterofilms using High Resolution X-ray Diffraction (HRXRD), High Resolution Cross-sectional Transmission Electron Microscopy (HRXTEM), molten potassium hydroxide (KOH) etching, and dry thermal oxidation. The results suggest that step free surface heteroepitaxy enables remarkably benign partial lattice mismatch strain relief during heterofilm growth.

KW - 3C-SiC

KW - Cubic-SiC

KW - Epitaxial Growth

KW - Hetero-Epitaxy

KW - Step-Free Surface Hetero-Epitaxy

UR - https://www.scopus.com/pages/publications/0242665454

U2 - 10.4028/www.scientific.net/msf.433-436.213

DO - 10.4028/www.scientific.net/msf.433-436.213

M3 - Conference contribution

AN - SCOPUS:0242665454

SN - 9780878499205

T3 - Materials Science Forum

SP - 213

EP - 216

BT - Materials Science Forum

A2 - Bergman, Peder

A2 - Janzén, Erik

PB - Trans Tech Publications Ltd

T2 - Proceedings of the 4th European Conference on Silicon Carbide and Related Materials

Y2 - 2 September 2002 through 5 September 2002

ER -

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

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Keywords

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