TY - GEN
T1 - Characterization of 4H 〈000-1〉 silicon carbide films grown by solvent-laser heated floating zone
AU - Woodworth, Andrew A.
AU - Sayir, Ali
AU - Neudeck, Philip G.
AU - Raghothamachar, Balaji
AU - Dudley, Michael
PY - 2012
Y1 - 2012
N2 - Commercially available bulk silicon carbide (SiC) has a high number (>2000/cm2) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by X-ray transmission Laue diffraction patterns and X-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.
AB - Commercially available bulk silicon carbide (SiC) has a high number (>2000/cm2) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by X-ray transmission Laue diffraction patterns and X-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.
UR - https://www.scopus.com/pages/publications/84879264218
U2 - 10.1557/opl.2012.1149
DO - 10.1557/opl.2012.1149
M3 - Conference contribution
AN - SCOPUS:84879264218
SN - 9781627482400
T3 - Materials Research Society Symposium Proceedings
SP - 113
EP - 118
BT - Silicon Carbide 2012 - Materials, Processing and Devices
T2 - 2012 MRS Spring Meeting
Y2 - 9 April 2012 through 13 April 2012
ER -