TY - GEN
T1 - Characterization of defect structures in sic single crystals using synchrotron X-ray topography
AU - Wang, S.
AU - Dudley, M.
AU - Carter, C.
AU - Asbury, D.
AU - Fazi, C.
PY - 1993
Y1 - 1993
N2 - Synchrotron white beam X-ray topography has been used to characterize defect structures in 6H-SiC wafers grown on (0001) seeds. Two major types of defects are observed: super screw dislocations approximately perpendicular to the basal plane and dislocation networks lying in the basal plane. The super screw dislocations, which have open cores, are growth dislocations. These dislocations act as sources and/or sinks for the glide dislocation networks. Detailed analysis and discussion of dislocation generation phenomena and Burgers vectors will be presented.
AB - Synchrotron white beam X-ray topography has been used to characterize defect structures in 6H-SiC wafers grown on (0001) seeds. Two major types of defects are observed: super screw dislocations approximately perpendicular to the basal plane and dislocation networks lying in the basal plane. The super screw dislocations, which have open cores, are growth dislocations. These dislocations act as sources and/or sinks for the glide dislocation networks. Detailed analysis and discussion of dislocation generation phenomena and Burgers vectors will be presented.
UR - https://www.scopus.com/pages/publications/0027229714
U2 - 10.1557/proc-307-249
DO - 10.1557/proc-307-249
M3 - Conference contribution
AN - SCOPUS:0027229714
SN - 1558992030
SN - 9781558992030
T3 - Materials Research Society Symposium Proceedings
SP - 249
EP - 254
BT - Applications of Synchrotron Radiation Techniques to Materials Science
PB - Publ by Materials Research Society
T2 - Materials Research Society Spring Meeting
Y2 - 12 April 1993 through 15 April 1993
ER -